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| 型号： | SI7110DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 13.5A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.3 毫欧 @ 21.1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1660 (CN2011-ZH PDF) |
| 其它名称： | SI7110DN-T1-GE3DKR |
Si7110DN
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.0053 at V GS = 10 V
0.0078 at V GS = 4.5 V
I D (A)
21.1
17.4
Q g (Typ.)
14 nC
? Halogen-free Option Available
? TrenchFET ? Gen II Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
RoHS
COMPLIANT
? PWM Optimized
PowerPAK 1212-8
? 100 % R g Tested
APPLICATIONS
3.30 mm
1
S
2
S
S
3.30 mm
? Synchronous Rectification
? Synchronous Buck
D
D
3
4
G
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free)
Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
20
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Single Avalanche Current
Single Avalanche Energy
T A = 25 °C
T A = 70 °C
L = 0 1 mH
I D
I DM
I S
I AS
E AS
21.1
16.9
3.2
60
35
61
13.5
10.8
1.3
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.8
2.0
- 55 to 150
260
1.5
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
24
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73143
S-80581-Rev. E, 17-Mar-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7115DN-T1-E3 | MOSFET P-CH D-S 150V PPAK 1212-8 |
| SI7120DN-T1-GE3 | MOSFET N-CH 60V 6.3A 1212-8 |
| SI7123DN-T1-GE3 | MOSFET P-CH 20V 10.2A 1212-8 |
| SI7129DN-T1-GE3 | MOSFET P-CH D-S 30V 1212-8 |
| SI7135DP-T1-GE3 | MOSFET P-CH 30V 60A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7112DN-T1-E3 | 功能描述:MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7112DN-T1-GE3 | 功能描述:MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7113DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET |
| SI7113DN-T1-E3 | 功能描述:MOSFET 100V 13.2A 52W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7113DN-T1-GE3 | 功能描述:MOSFET 100V 13.2A 52W 134mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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