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| 型号： | SI7110DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 13.5A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.3 毫欧 @ 21.1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1660 (CN2011-ZH PDF) |
| 其它名称： | SI7110DN-T1-GE3DKR |
Si7110DN
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.5
2.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
40
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 21.1 A
V GS = 4.5 V, I D = 17.4 A
V DS = 15 V, I D = 21.1 A
0.0044
0.0064
71
0.0053
0.0078
Ω
S
Diode Forward Voltage
a
V SD
I S = 3.2 A, V GS = 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q g
14
21
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 10 V, V GS = 4.5 V, I D = 21.1 A
7
4.5
nC
Gate Resistance
R g
f = 1 MHz
0.7
1.4
2.1
Ω
Turn-On Delay Time
t d(on)
12
20
Rise Time
t r
V DD = 10 V, R L = 10 Ω
10
15
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t d(off)
t f
t rr
Q rr
t a
t b
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 3.2 A, di/dt = 100 A/μs
36
10
30
25
14
16
55
15
60
50
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
48
36
24
12
V GS = 10 thru 4 V
60
48
36
24
12
T C = 125 °C
0
3V
0
25 °C
- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73143
S-80581-Rev. E, 17-Mar-08
相关PDF资料 |
PDF描述 |
|---|---|
| SI7115DN-T1-E3 | MOSFET P-CH D-S 150V PPAK 1212-8 |
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| SI7123DN-T1-GE3 | MOSFET P-CH 20V 10.2A 1212-8 |
| SI7129DN-T1-GE3 | MOSFET P-CH D-S 30V 1212-8 |
| SI7135DP-T1-GE3 | MOSFET P-CH 30V 60A PPAK 8SOIC |
相关代理商/技术参数 |
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|---|---|
| SI7112DN-T1-E3 | 功能描述:MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7112DN-T1-GE3 | 功能描述:MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7113DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET |
| SI7113DN-T1-E3 | 功能描述:MOSFET 100V 13.2A 52W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7113DN-T1-GE3 | 功能描述:MOSFET 100V 13.2A 52W 134mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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