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参数资料
| 型号： | SI7462DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 200V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 4.1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7462DP-T1-GE3DKR |
Si7462DP
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
200
R DS(on) ( Ω )
0.130 at V GS = 10 V
0.142 at V GS = 6.0 V
I D (A)
4.1
3.9
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized For Fast Switching
PowerPAK SO-8
APPLICATIONS
? Primary Side Switch
6.15 mm
1
S
S
5.15 mm
2
S
3
4
G
D
D
8
7
D
D
6
5
D
G
Bottom View
S
Ordering Information: Si7462DP-T1-E3 (Lead (Pb)-free)
Si7462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
200
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
T A = 25 °C
T A = 85 °C
L = 0.1 mH
I D
I DM
I AS
E AS
4.1
3.0
12
6
1.8
2.6
1.9
A
mJ
Continuous Source Current (Diode Conduction) a
I S
4.0
1.6
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
4.8
2.6
- 55 to 150
260
1.9
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
21
55
1.7
26
65
2.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72136
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7463ADP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET |
| SI7463DP | 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK |
| SI7463DP-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 11A 8PIN PWRPAK SO - Tape and Reel |
| SI7463DP-T1-E3 | 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7463DP-T1-GE3 | 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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