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| 型号： | SI7629DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.6 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 177nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5790pF @ 10V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7629DN-T1-GE3DKR |
New Product
Si7629DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.0046 at V GS = - 10 V
- 20 0.0062 at V GS = - 4.5 V
0.0117 at V GS = - 2.5 V
I D (A)
- 35 a
- 35 a
- 35 a
Q g (Typ.)
59 nC
FEATURES
? TrenchFET ? Gen III P-Channel Power MOSFET
? 100 % R g and UIS Tested
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK? 1212-8
APPLICATIONS
? Adaptor Switch
S
3.3 mm
1
S
S
3.3 mm
? Battery Switch
2
S
? Load Switch
3
4
G
G
D
8
7
D
D
6
5
D
Bottom V ie w
Orderin g Information:
Si7629D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 12
- 35 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 35 a
- 21.3 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 17.1 b, c
- 80
- 35 a
- 3.3 b, c
- 20
20
A
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.7 b, c
W
T A = 70 °C
2.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
26
1.9
33
2.4
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 70556
S12-0679-Rev. C, 26-Mar-12
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| SI7634BDP-T1-GE3 | 功能描述:MOSFET 30V 40A 48W 5.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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