参数资料
型号: SI8250
厂商: Silicon Laboratories Inc.
元件分类: 基准电压源/电流源
英文描述: DIGITAL POWER CONTROLLER
中文描述: 数字化电源控制器
文件页数: 22/30页
文件大小: 932K
代理商: SI8250
Si8250/1/2
22
Preliminary Rev. 0.8
In both cases, the bias supplies must be filtered using low ESR/ESL capacitors placed close to the IC pins.
Thick copper traces should be connected to the bias pins (VDD, VDDA) and the ground pins (GND, GNDA) to
reduce resistance and inductance. The copper routings from the drivers to the FETs should be kept short and wide,
especially in very high frequency applications, to reduce inductance of the traces so that the drive signals can be
kept clean.
Connections between VSENSE and the output voltage must be kept absolutely as short as possible to minimize
inductance and parasitic ringing effects. It is best to locate the Si8250/1/2 as close to the output voltage terminal as
possible and use a Kelvin connection to ensure to difference in ground potential between the Si8250/1/2 and the
output voltage ground return.
Most applications will require access to the debug pins. These pins are susceptible to damage from electrostatic
discharge (ESD). It is therefore recommended the debug circuit interface use the input protection circuitry shown in
Figure 11.
Figure 11. Debug Interface Pin Protection Circuit
DEBUG
CONNECTOR
10
10
Si8250/1/2
Debug Pins
(C2D, C2CK)
2
相关PDF资料
PDF描述
SI8250-IM DIGITAL POWER CONTROLLER
SI8250-IQ DIGITAL POWER CONTROLLER
SI8401DB-T1 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI8401DB-T1-E3 P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI8401DB Single P-Channel MOSFET;
相关代理商/技术参数
参数描述
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