参数资料
型号: SI8518-C-IS
厂商: Silicon Laboratories Inc
文件页数: 4/36页
文件大小: 0K
描述: SENSOR CURR 10A 5.5V UNI 20SOIC
标准包装: 38
电流 - 感应: 10A
精确度: ±5%
灵敏度: 196mV/A
电流 - 电源: 4mA
传感器类型: 闭环
电源电压: 2.7 V ~ 5.5 V
输出: 可配置
频率: 50kHz ~ 1MHz
电极标记: 单向
工作温度: -40°C ~ 125°C
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
包装: 管件
其它名称: 336-1734-5
Si85xx
1. Electrical Specifications
Table 1. Electrical Specifications
T A = –40 to +125 oC (typical specified at 25 oC), VDD = 3 V (±10%) to 5 V (±10%), f = 400 kHz, unless specified
Parameter
Supply Voltage (V DD )
Supply Current
Conditions
Fully enabled,
Min
2.7
Typ
4
Max
5.5
7
Unit
V
mA
input frequency = 1 MHz
Undervoltage Lockout (V UVLO )
Undervoltage Lockout Hysteresis
2.1
2.3
100
2.5
V
mV
(V HYST )
Logic Input HIGH Level
Logic Input LOW Level
Reset Time (t R )
MODE, R1, R2, R3, R4 inputs
(TTL compatible)
Time for 5% initial accuracy
2.0
150
0.8
V
V
ns
Reset Time Resistor
Range 1
15
2500
k ?
R1, R2, R3, R4 Input Rise Time (t RR )
R1, R2, R3, R4 Input Fall Time (t FR )
Measurement Watchdog Timeout (t WD )
30
50
30
30
80
ns
ns
μs
Series Input Resistance
Series Inductance
Measured from IIN to IOUT
Measured from IIN to IOUT
1.3
2
m ?
nH
Input/Output
Delay 1
OUT, OUT1, OUT2 delay relative to
150
200
ns
input
Start-Up Self-Cal Delay (t CAL ) 1
Time from VDD = V UVLO + V HYST to
150
200
μs
cal complete
Input Common Mode Voltage Range
(dc) 1
4x4 mm QFN
SOIC-20
1000
5000
V RMS
V RMS
Operating Input Frequency Range
DC Power Supply Rejection Ratio
Sensitivity @ VDD = 3 V
Sensitivity @ VDD = 5 V
(f) 1
Si8501/11/17
Si8502/12/18
Si8503/13/19
Si8501/11/17
Si8502/12/18
Si8503/13/19
50
40
404
202
101
392
196
98
1000
kHz
db
mV/A
mV/A
mV/A
mV/A
mV/A
mV/A
Notes:
1. Guaranteed by design and/or characterization.
2. Maximum output load is not recommended to exceed 200 pF and 5 k ? .
3. Production tested at 400 kHz (50% duty cycle) at VDD = 3.3 V.
4. See "2.4. Total Measurement Error" on page 11 for more information.
4
Preliminary Rev. 0.4
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