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参数资料
| 型号： | Si8900EDB |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional N-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保护双向P沟道MOSFET，用于电池保护电路 |
| 文件页数： | 1/5页 |
| 文件大小： | 56K |
| 代理商： | SI8900EDB |
FEATURES
TrenchFET Power MOSFET
Ultra-Low r
SS(on)
ESD Protected: 4000 V
New MICRO FOOT Chipscale Packaging Reduces
Footprint Area Profile (0.62 mm) and On-Resistance
Per Footprint Area
APPLICATIONS
Battery Protection Circuit
-
1-2 Cell Li+/LiP Battery Pack for Portable Devices
Si8900EDB
Vishay Siliconix
New Product
Document Number: 71830
S-21474—Rev. D, 26-Aug-02
www.vishay.com
1
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
S1S2
(V)
r
S1S2(on)
( )
I
S1S2
(A)
0.024 @ V
GS
= 4.5 V
7
0.026 @ V
GS
= 3.7 V
0.034 @ V
GS
= 2.5 V
0.040 @ V
GS
= 1.8 V
6.8
5.0
5.5
20
G
2
S
2
G
1
S
1
N-Channel
4 k
4 k
MICRO FOOT
Device Marking:
8900E = P/N Code
xxx = Date/Lot Traceability Code
S
2
S
2
S
2
S
2
6
7
Bump Side View
G
2
G
1
5
4
8
9
S
1
S
1
3
10
S
1
S
1
2
1
Backside View
8
x
Pin 1 Identifier
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Source1—Source2 Voltage
V
S1S2
20
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
7
5.4
Continuous Source1—Source2 Current
(T
J
= 150 C)
a
T
A
= 85 C
I
S1S2
5.1
3.9
A
Pulsed Source1—Source2 Current
I
SM
10
T
A
= 25 C
T
A
= 85 C
1.8
0.9
1
Maximum Power Dissipation
a
P
D
0.5
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
215
220
VPR
C
Package Reflow Conditions
c
IR/Convection
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
55
70
Maximum Junction-to-Ambient
a
Steady State
R
thJA
95
120
C/W
Maximum Junction-to-Foot
b
Steady State
R
thJF
12
15
Notes
a.
b.
c.
Surface Mounted on 1” x 1” FR4 Board.
The Foot is defined as the top surface of the package.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8900EDB-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 20V 5.4A 10PIN MICRO FOOT - Tape and Reel |
| SI8900EDB-T2-E1 | 功能描述:MOSFET 20V 7.0A 1.8W Bi-Directional RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| Si8901B-A01-GS | 功能描述:隔离器接口集成电路 2.5kV iso monitoring ADC with I2C bus RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| SI8901B-A01-GSR | 制造商:Silicon Laboratories Inc 功能描述:2.5 KV ISOLATED MONITORING ADC WITH I2C BUS - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ADC ISO MONITORING 2.5KV I2C 制造商:Silicon Laboratories Inc 功能描述:IC ADC 10BIT I2C/SRL SOIC 制造商:Silicon Laboratories Inc 功能描述:2.5 kV Monitoring ADC with UART bus |
| Si8901D-A01-GS | 功能描述:隔离器接口集成电路 2.5kV iso monitoring ADC with I2C bus RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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