- 您现在的位置：买卖IC网 > Datasheet目录357 > SI9910DY-E3 (Vishay Siliconix)IC MOSFET DVR ADAPTIVE PWR 8SOIC Datasheet资料下载
参数资料
| 型号： | SI9910DY-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR ADAPTIVE PWR 8SOIC |
| 标准包装： | 500 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 120ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 500V |
| 电源电压： | 10.8 V ~ 16.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 散装 |
Si9910
Vishay Siliconix
Adaptive Power MOSFET Driver 1
FEATURES
D dv/dt and di/dt Control
D Undervoltage Protection
D Short-Circuit Protection
DESCRIPTION
D t rr Shoot-Through Current Limiting
D Low Quiescent Current
D CMOS Compatible Inputs
D Compatible with Wide Range of MOSFET Devices
D Bootstrap and Charge Pump Compatible
(High-Side Drive)
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
FUNCTIONAL BLOCK DIAGRAM
V DS
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t rr (diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in both standard and lead (Pb)-free
8-pin plastic DIP and SOIC packages which are specified to
operate over the industrial temperature range of ? 40 _ C to
85 _ C.
R3
*100 k W
V DD
DRAIN
C1
Undervoltage/
Overcurrent
Protection
PULL-UP
R2
*2 to 5 pF
*250 W
INPUT
2- m s
Delay
PULL-DOWN
I SENSE
R1
*0.1 W
V SS
* Typical Values
1. Patent Number 484116.
Document Number: 70009
S-42043—Rev. H, 15-Nov-04
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI9912DY-T1-E3 | IC DRIVER GATE HALF BRIDGE 8SOIC |
| SI9976DY-E3 | IC DRVR MOSF 1/2BRDG N-CH 14SOIC |
| SI9978DW-E3 | IC FET DRIVER H-BRIDGE 1A 24SOIC |
| SIP12401DMP-T1-E3 | IC BOOST REG PWM PPAK MLP33-6 |
| SK-16FX-EUROSCOPE-FMA | KIT BUNDLE 100PMC KIT/SOFTWARE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI9910DY-T1 | 功能描述:功率驱动器IC MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9910DY-T1-E3 | 功能描述:功率驱动器IC MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9912 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9912DB | 功能描述:功率驱动器IC SMD SI9912 Kit RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9912DY | 功能描述:功率驱动器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。