参数资料
型号: SI9976DY-E3
厂商: Vishay Siliconix
文件页数: 1/8页
文件大小: 0K
描述: IC DRVR MOSF 1/2BRDG N-CH 14SOIC
标准包装: 550
配置: 半桥
输入类型: 非反相
延迟时间: 350ns
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 40V
电源电压: 4.5 V ~ 16.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 散装
Si9976
Vishay Siliconix
N-Channel Half-Bridge Driver
FEATURES
APPLICATIONS
D
D
D
D
D
D
D
Single Input for High-Side and Low-Side MOSFETs
20- to 40-V Supply
Static (dc) Operation
Cross-Conduction Protected
Undervoltage Lockout
ESD and Short Circuit Protected
Fault Feedback
D
D
D
D
D
D
D
Power Supplies
Motor Drives
Office Automation
Computer Peripherals
Industrial Controllers
Robotics
Medical Equipment
DESCRIPTION
The Si9976 is an integrated driver for an n-channel MOSFET
half-bridge. Schmitt trigger inputs provide logic signal
compatibility and hysteresis for increased noise immunity. An
internal low-voltage regulator allows the device to be powered
directly from a system supply of 20 to 40 volts. Both half-bridge
n-channel gates are driven directly with low-impedance
outputs. Addition of one external capacitor allows an internal
circuit to level shift both the power supply and logic signal for
the half-bridge high-side n-channel gate drive. An internal
charge pump replaces leakage current lost in the high-side
driver circuit to provide “static” (dc) operation in any output
condition. Protection features include an undervoltage
lockout, cross-conduction prevention logic, and a short circuit
monitor.
The Si9976 is available in both standard and lead (Pb)-free,
14-pin SOIC (surface mount) packages, specified to operate
over the industrial ( ? 40 to 85 _ C) temperature range.
FUNCTIONAL BLOCK DIAGRAM
V+
V+ 3
Bootstrap
Regulator
2
CAP
V DD
4
Low Voltage
Regulator
Under Voltage
Lockout 2
Charge
Pump
V DD
Under Voltage
Lockout 1
12
G 1
C Boot
V CC
7
13
S 1
8
FAULT
IN 5
Short Circuit
& UVL Detect
250 ns
Delay
Half-
Bridge
Output
0.01 m F
EN 6
10
Substrate
R
S Q
Enable Latch
300 ns
Delay
9
G 2
GND
GND
Document Number: 70016
S-40757—Rev. F, 19-Apr-04
www.vishay.com
1
相关PDF资料
PDF描述
SI9978DW-E3 IC FET DRIVER H-BRIDGE 1A 24SOIC
SIP12401DMP-T1-E3 IC BOOST REG PWM PPAK MLP33-6
SK-16FX-EUROSCOPE-FMA KIT BUNDLE 100PMC KIT/SOFTWARE
SK-AX1-AX2-KITTOP ADAPTER SOCKET CQ352-FG896
SK-AX250-CQ352RTFG484S ADAPTER BOARD SKT CQ352-FG484
相关代理商/技术参数
参数描述
SI9976DY-T1 功能描述:功率驱动器IC Half Bridge Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
SI9976DY-T1-E3 功能描述:功率驱动器IC DRVR 0.5A Dual Hi/Lo Side Half Brdg RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
SI9978 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Configurable H-Bridge Driver
SI9978DB 功能描述:功率驱动器IC SI9978 Demo Board RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
SI9978DW 功能描述:功率驱动器IC Half Bridge Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube