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| 型号： | SI9912DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER GATE HALF BRIDGE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si9912
Vishay Siliconix
Half-Bridge MOSFET Driver for Switching Power Supplies
FEATURES
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
4.5- to 5.5-V Operation
Undervoltage Lockout
250-kHz to 1-MHz Switching Frequency
Shutdown Quiescent Current <5 m A
One Input PWM Signal Generates Both Drive
Bootstrapped High-Side Drive
Operates from 4.5- to 30-V Supply
TTL/CMOS Compatible Input Levels
1-A Peak Drive Current
Break-Before-Make Circuit
D
D
D
D
D
Multiphase Desktop CPU Supplies
Single-Supply Synchronous Buck Converters
Mobile Computing CPU Core Power Converters
Standard-Synchronous Converters
High Frequency Switching Converters
DESCRIPTION
The Si9912 is a dual MOSFET high-speed driver with
break-before-make. It is designed to operate in high frequency
dc-dc switchmode power supplies. The high-side driver is
bootstrapped to handle the high voltage slew rate associated
with “floating” high-side gate drivers. Each driver is capable of
switching a 3000-pF load with 60-ns propogation delay and
25-ns transition time. The Si9912 comes with an internal
break-before-make feature to prevent shoot-through current in
the external MOSFETs. A shutdown pin is used to enable the
driver. When disabled, the quiescent current of the driver is
less than 5 m A.
The Si9912 is available in both standard and lead (Pb)-free, 8-pin
SOIC packages for operation over the industrial operation range
( ? 40 _ C to 85 _ C).
FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE
V DD
D1
BOOT
V DC
Level Shift
OUT H
Q 1
C BOOT
TRUTH TABLE
V S SD IN V OUTL V OUTH
SD
IN
Undervoltage
V DD
V S
OUT L
Q 2
OUTPUT
L
L
L
L
H
H
L
L
H
H
L
L
L
H
L
H
L
H
L
L
H
L
L
L
L
L
L
H
L
L
H
H
H
H
L
H
L
L
L
H
+
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
?
V BBM
GND
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI9913 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9913_04 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913DB | 功能描述:功率驱动器IC SMD SI9913 Kit RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9913DY | 功能描述:功率驱动器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9913DY-E3 | 功能描述:功率驱动器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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