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参数资料
| 型号： | SI9912DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER GATE HALF BRIDGE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si9912
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Parameter
Low Side Driver Supply Voltage
Input Voltage on IN
Shutdown Pin Voltage
Bootstrap Voltage
High Side Driver (Bootstrap) Supply Voltage
Operating Junction Temperature Range
Storage Temperature Range
Power Dissipation (Note a and b)
Thermal Impedance
Lead Temperature (soldering 10 Sec)
Symbol
V DD
V IN
V SD
V BOOT
V BOOT ? V S
T J
T stg
P D
q JA
Limit
7.0
? 0.3 to V DD +0.3
? 0.3 to V DD +0.3
35.0
7.0
? 40 to 125
? 40 to 150
830
125
300
Unit
V
_ C
mW
° C/W
° C
Notes
a. Device mounted with all leads soldered to P.C. Board
b. Derate 8.3 W/ _ C above 25 _ C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Bootstrap Voltage (High-Side Drain Voltage)
Logic Supply
Bootstrap Capacitor
Ambient Temperature
Symbol
V BOOT
V DD
C BOOT
T A
Limit
4.5 to 30
4.5 to 5.5
100 n to 1 m
? 40 to 85
Unit
V
F
_ C
SPECIFICATIONS
Test Conditions Unless Specified
Limits
Parameter
Symbol
V DD = 4.5 to 5.5 V
V BOOT = 4.5 to 30 V, T A = ? 40 to 85 _ C
Min a
Typ b
Max a
Unit
Power Supplies
V DD Supply
V DD
4.5
I DD Supply
I DD1(en)
SD = H, IN = H, V S = 0 V
1000
I DD Supply
I DD Supply
I DD Supply
I DD Supply
I DD Supply
I DD2(en)
I DD3(dis)
I DD4(en)
I DD5(dis)
I DD(en)
I DD(dis)
SD = H, IN = L, V S = 0 V
SD = L, IN = X, V S = 0 V
SD = H, IN = X, V S = 25 V, V BOOT = 30 V
SD = L, IN = X, V S = 25 V, V BOOT = 30 V
F IN = 300 kHz, SD = High, Driving Si4412DY
F IN = 300 kHz, SD = Low, Driving Si4412DY
9
3
500
5
200
5
m A
mA
m A
Boot Strap Current
I BOOT
V BOOT = 30 V, V S = 25 V, V OUTH = High
0.9
3
mA
Reference Voltage
Break-Before-Make Reference Voltage
V BBM
1.1
3
V
Logic Inputs (SD, IN)
Input High
Input Low
V IH
V IL
0.7 V DD
? 0.3
V DD + 0.3
0.3 V DD
V
Undervoltage Lockout
V DD Undervoltage
V DD Undervoltage Hysteresis
V UVL
V HYST
V DD Rising
3.7
0.4
4.3
V
www.vishay.com
2
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
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