参数资料
型号: SI9912DY-T1-E3
厂商: Vishay Siliconix
文件页数: 3/9页
文件大小: 0K
描述: IC DRIVER GATE HALF BRIDGE 8SOIC
标准包装: 2,500
配置: 半桥
输入类型: 非反相
延迟时间: 25ns
电流 - 峰: 1A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 30V
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
Si9912
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
Limits
Parameter
Symbol
V DD = 4.5 to 5.5 V
V BOOT = 4.5 to 30 V, T A = ? 40 to 85 _ C
Min a
Typ b
Max a
Unit
Bootstrap Diode
Diode Forward Voltage
VF D1
Forward Current = 100 mA
0.8
1
V
Output Drive Current
OUT H Source Current
I OUT(H+)
V BOOT ? V S = 3.7 V, V OUTH ? V S = 2 V
? 0.4
OUT H Sink Current
OUT L Source Current
OUT L Sink Current
I OUT ( H ? )
I OUT(L+ )
I OUT(L ? )
V BOOT ? V S = 3.7 V, V OUTH ? V S = 1 V
V DD = 4.5 V, V OUTL = 2 V
V DD = 4.5 V, V OUTL = 1 V
0.4
0.6
? 0.4
A
Timing (C LOAD = 3 nF)
OUT L Off Propagation Delay
OUT L On Propagation Delay
t pdl(OUTL)
t pdh(OUTL)
V DD = 4.5 V
30
20
OUT H Off Propagation Delay
OUT H On Propagation Delay
OUT L Turn On Time
OUT L Turn Off Time
OUT H Turn On Time
OUT H Turn Off Time
t pdl(OUTH)
t pdh(OUTH)
t r(OUTL)
t f(OUTL)
t r(OUTH)
t f(OUTH)
V BOOT ? V S = 4 4.5 5 V
OUT L = 10 to 90%
OUT L = 90 to 10%
OUT H ? V S = 10 to 90%
OUT H ? V S = 90 to 10%
30
20
25
25
30
20
ns
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TIMING WAVEFORMS
IN
50%
t pdh(OUTL)
50%
90%
t f(OUTL)
90%
OUT L
10%
t pdl ( OUTH)
10%
t r(OUTL)
t pdl(OUTL)
OUT H
t pdh(OUTH)
t r(OUTH)
90%
90%
t f(OUTH)
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
V S
10%
10%
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