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| 型号： | SI9912DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER GATE HALF BRIDGE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si9912
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
0
V OUT(H+) vs. Temperature
5
V OUT(H ? ) vs. Temperature
See Figure 3
? 1
? 2
0.5 A
1A
4
3
? 3
? 4
? 5
See Figure 3
2
1
0
2A
1.5 A
1A
0.5 A
? 50
? 25
0
25
50
75
100
? 50
? 25
0
25
50
75
100
Temperature ( _ C)
Temperature ( _ C)
0
? 1
V OUT(L+) vs. Temperature
0.5 A
1A
2.0
1.5
V OUT(L ? ) vs. Temperature
See Figure 3
2A
? 2
? 3
1.5 A
1.0
1.5 A
1A
? 4
? 5
2A
See Figure 3
0.5
0.0
0.5 A
? 50
? 25
0
25
50
75
100
? 50
? 25
0
25
50
75
100
Temperature ( _ C)
THEORY OF OPERATION
Break-Before-Make Function
The Si9912 has an internal break-before-make function to
ensure that both high-side and low-side MOSFETs are not
turned on at the same time. The high-side drive (OUT H ) will not
turn on until the low-side gate drive voltage (measured at the
OUT L pin) is less than V BBM , thus ensuring that the low-side
MOSFET is turned off. The low-side drive (OUT L ) will not turn
on until the voltage at the MOSFET half-bridge output
(measured at the V S pin) is less than V BBM , thus ensuring that
the high-side MOSFET is turned off.
www.vishay.com
6
Temperature ( _ C)
Under Voltage Lockout Function
The Si9912 has an internal under-voltage lockout feature to
prevent driving the MOSFET gates when the supply voltage (at
V DD ) is less than the under-voltage lockout specification
(V UVL ). This prevents the output MOSFETs from being turned
on without sufficient gate voltage to ensure they are fully on.
There is hysteresis included in this feature to prevent lockout
from cycling on and off.
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI9913 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9913_04 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913DB | 功能描述:功率驱动器IC SMD SI9913 Kit RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9913DY | 功能描述:功率驱动器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SI9913DY-E3 | 功能描述:功率驱动器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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