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| 型号： | SIE848DF-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V POLARPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 138nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6100pF @ 15V |
| 功率 - 最大： | 125W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-PolarPAK?（L） |
| 供应商设备封装： | 10-PolarPAK?（L） |
| 包装： | 标准包装 |
| 其它名称： | SIE848DF-T1-GE3DKR |
New Product
SiE848DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
I D (A) a
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
V DS (V)
30
R DS(on) ( Ω ) e
0.0016 at V GS = 10 V
0.0022 at V GS = 4.5 V
Silicon
Limit
211
180
Package
Limit
60
60
Q g (Typ.)
43 nC
? TrenchFET ? Gen III Power MOSFET
? Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK ? Package for Double-
Sided Cooling
? Leadframe-Based New Encapsulated Package
Package Drawing
www.vishay.com/doc?72945
PolarPAK
- Die Not Exposed
- Same Layout Regardless of Die Size
? Low Q gd /Q gs Ratio Helps Prevent Shoot-Through
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
? 100 % R g and UIS Tested
? Compliant to RoHS directive 2002/95/EC
APPLICATIONS
? VRM
D
D
D
S
G
D
? DC/DC Conversion: Low-Side
? Synchronous Rectification
G
D
G
S
S
D
5
4
3
2
1
1
2
3
4
5
Top V ie w
Top s u rface is connected to pins 1, 5, 6, and 10
Bottom V ie w
S
Orderin g Information: SiE 8 4 8 DF-T1-E3 (Lead (P b )-free)
SiE 8 4 8 DF-T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
For Related Documents
www.vishay.com/ppg?68821
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
211 (Silicon Limit)
60 a (Package Limit)
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
I D
I DM
I S
60 a
43 b, c
34 b, c
100
60 a
4.3 b, c
A
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I AS
E AS
50
125
mJ
T C = 25 °C
125
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
80
5.2 b, c
W
T A = 70 °C
3.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/doc?73257 ) . The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68821
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
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| SIE850DF-T1-E3 | 功能描述:MOSFET 30V 164A 104W 2.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIE850DF-T1-GE3 | 功能描述:MOSFET 30V 164A 104W 2.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIE854DF-T1-E3 | 功能描述:MOSFET 100V 64A 125W 14.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIE854DF-T1-GE3 | 功能描述:MOSFET 100V 64A 125W 14.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIE860DF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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