参数资料
型号: SIR383
厂商: Everlight Electronics Co Ltd
文件页数: 7/7页
文件大小: 0K
描述: LED IR 5MM BLUE WATER CLEAR AXL
标准包装: 500
电流 - DC 正向(If): 100mA
辐射强度(le)最小值@正向电流: 20mW/sr @ 20mA
波长: 875nm
正向电压: 1.3V
视角: 20°
方向: 顶视图
安装类型: 通孔
封装/外壳: 径向
包装: 散装
其它名称: 1080-1175
SIR383
Packing Quantity Specification
1.500PCS/1Bag , 5Bags/1Box
2.10Boxes/1Carton
Label Form Specification
CPN: Customer’s Production Number
P/N : Production Number
QTY: Packing Quantity
CAT: Ranks
SIR383
HUE: Peak Wavelength
REF: Reference
LOT No: Lot Number
Notes
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on
material change for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions
for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for
any damage resulting from use of the product which does not comply with the absolute
maximum ratings and the instructions included in these specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT
corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s
consent.
EVERLIGHT ELECTRONICS CO., LTD.
Office: No 25, Lane 76, Sec 3, Chung Yang Rd,
Tucheng, Taipei 236, Taiwan, R.O.C
Tel: 886-2-2267-2000, 2267-9936
Fax: 886-2267-6244, 2267-6189, 2267-6306
http:\\www.everlight.com
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 1
Page: 7 of 7
Device No : CDIS-038-001
Prepared date : 2006/7/21
Prepared by : wangyinsheng
相关PDF资料
PDF描述
SIR404DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR406DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR414DP-T1-GE3 MOSFET N-CH D-S 40V 8-SOIC
SIR418DP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SIR436DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
相关代理商/技术参数
参数描述
SIR383C 功能描述:红外发射源 Infrared LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
SIR-38EH 制造商:Russell 功能描述:
SIR401DP-T1-GE3 功能描述:MOSFET -20V 3.2mOhm@10V 50A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR402DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR402DP_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET