- 您现在的位置：买卖IC网 > Datasheet目录515 > SIR414DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 40V 8-SOIC Datasheet资料下载
参数资料
| 型号： | SIR414DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 40V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 117nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4750pF @ 20V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SIR414DP-T1-GE3DKR |
New Product
SiR414DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
40
R DS(on) ( Ω )
0.0028 at V GS = 10 V
0.0032 at V GS = 4.5 V
I D (A) a
50
50
Q g (Typ.)
38 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
PowerPAK ? SO-8
APPLICATIONS
? Synchronous Rectification
6.15 mm
1
S
2
S
S
5.15 mm
? Secondary Side DC/DC
D
D
3
4
G
8
D
7
6
D
5
D
G
Bottom View
Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
40
± 20
50 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
50 a
33 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
26 b, c
70
50 a
4.9 b, c
40
80
A
mJ
T C = 25 °C
83
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
53
5.4 b, c
W
T A = 70 °C
3.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
18
1.0
23
1.5
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?64727) . The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SIR418DP-T1-GE3 | MOSFET N-CH D-S 40V PPAK 8SOIC |
| SIR436DP-T1-GE3 | MOSFET N-CH D-S 25V PPAK 8SOIC |
| SIR440DP-T1-GE3 | MOSFET N-CH 20V 60A PPAK 8SOIC |
| SIR462DP-T1-GE3 | MOSFET N-CH 30V 30A PPAK 8SOIC |
| SIR464DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR416DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SIR416DP-T1-GE3 | 功能描述:MOSFET 40V 50A 69W 3.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR418DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SIR418DP-T1-GE3 | 功能描述:MOSFET 40V 40A 39W 5.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR418DP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 40A |
发布紧急采购，3分钟左右您将得到回复。