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| 型号： | SIR464DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 50A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.1 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 95nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3545pF @ 15V |
| 功率 - 最大： | 69W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1662 (CN2011-ZH PDF) |
| 其它名称： | SIR464DP-T1-GE3DKR |
New Product
SiR464DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0031 at V GS = 10 V
0.0038 at V GS = 4.5 V
I D (A) a, e
50
50
Q g (Typ.)
26.5 nC
? Halogen-free
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
? DC/DC Conversion
- Low-Side Switch
6.15 mm
1
S
2
S
S
5.15 mm
? Notebook
? Server
D
D
3
4
G
8
7
D
6
D
5
D
G
Bottom V ie w
Orderin g Information: SiR464DP-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
50 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
50 e
29.5 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
23.5 b, c
70
50 e
4.7 b, c
40
80
A
mJ
T C = 25 °C
69
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
44.4
5.2 b, c
W
T A = 70 °C
3.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) f, g
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, d t ≤ 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
19 24
1.2 1.8
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68871
S-82017-Rev. A, 01-Sep-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SIR468DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK 8SOIC |
| SIR470DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK 8SOIC |
| SIR472DP-T1-GE3 | MOSFET N-CH 30V 20A PPAK 8SOIC |
| SIR474DP-T1-GE3 | MOSFET N-CH D-S 30V PPAK 8SOIC |
| SIR494DP-T1-GE3 | MOSFET N-CH D-S 12V PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR466DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SIR466DP-T1-GE3 | 功能描述:MOSFET 30V 40A 54W 3.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR468DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SIR468DP-T1-GE3 | 功能描述:MOSFET 30V 40A 50W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR470DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
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