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| 型号： | SIR414DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 40V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 117nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4750pF @ 20V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SIR414DP-T1-GE3DKR |
New Product
SiR414DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
40
43
-6
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
2.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 20 A
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
0.0023
0.0026
102
0.0028
0.0032
Ω
S
Dynamic
b
Input Capacitance
C iss
4750
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, f = 1 MHz
610
275
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 20 A
V DS = 20 V, V GS = 4.5 V, I D = 20 A
78
38
13
117
57
nC
Gate-Drain Charge
Q gd
11
Gate Resistance
R g
f = 1 MHz
0.2
0.7
1.4
Ω
Turn-On Delay Time
t d(on)
14
25
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 20 V, R L = 2 Ω
I D ? 10 A, V GEN = 10 V, R g = 1 Ω
9
41
18
65
Fall Time
Turn-On Delay Time
t f
t d(on)
9
33
18
42
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 20 V, R L = 2 Ω
I D ? 10 A, V GEN = 4.5 V, R g = 1 Ω
22
42
13
35
65
25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
50
60
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 5 A
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
0.75
40
48
24
16
1.1
60
72
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
相关PDF资料 |
PDF描述 |
|---|---|
| SIR418DP-T1-GE3 | MOSFET N-CH D-S 40V PPAK 8SOIC |
| SIR436DP-T1-GE3 | MOSFET N-CH D-S 25V PPAK 8SOIC |
| SIR440DP-T1-GE3 | MOSFET N-CH 20V 60A PPAK 8SOIC |
| SIR462DP-T1-GE3 | MOSFET N-CH 30V 30A PPAK 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR416DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SIR416DP-T1-GE3 | 功能描述:MOSFET 40V 50A 69W 3.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR418DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SIR418DP-T1-GE3 | 功能描述:MOSFET 40V 40A 39W 5.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR418DP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 40A |
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