参数资料
型号: SIR383C
厂商: Everlight Electronics Co Ltd
文件页数: 6/7页
文件大小: 0K
描述: LED IR 5MM BLUE WATER CLEAR AXL
标准包装: 500
电流 - DC 正向(If): 100mA
辐射强度(le)最小值@正向电流: 20mW/sr @ 20mA
波长: 875nm
正向电压: 1.3V
视角: 20°
方向: 顶视图
安装类型: 通孔
封装/外壳: 径向
包装: 散装
其它名称: 1080-1176
SIR383C
Reliability Test Item And Condition
The reliability of products shall be satisfied with items listed below.
Confidence level : 90%
LTPD : 10%
NO. Item
Test Conditions
Test Hours/ Sample
Cycles
Sizes
Failure
Judgement
Ac/Re
Criteria
1 Solder Heat
TEMP. : 260 ℃± 5 ℃
10secs
22pcs
0/1
2 Temperature Cycle H : +100 ℃
15mins 300Cycles
22pcs
I R ≧ U × 2
0/1
5mins
Ee ≦ L × 0.8
L : -40 ℃
15mins
V F ≧ U ×1. 2
3 Thermal Shock
H :+100 ℃
5mins
300Cycles
22pcs
0/1
10secs
U : Upper
L :-10 ℃
5mins
Specification
4 High Temperature
TEMP. : +100 ℃
1000hrs
22pcs
Limit
0/1
Storage
L : Lower
5 Low Temperature
TEMP. : -40 ℃
1000hrs
22pcs
Specification 0/1
Storage
Limit
6 DC Operating Life I F =20mA
7 High Temperature/ 85 ℃ / 85% R.H
1000hrs
1000hrs
22pcs
22pcs
0/1
0/1
High Humidity
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2
Page: 6 of 7
Device No : DIS-038-004
Prepared date : 08-22-2005
Prepared by : JAINE TSAI
相关PDF资料
PDF描述
SIR383 LED IR 5MM BLUE WATER CLEAR AXL
SIR404DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR406DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR414DP-T1-GE3 MOSFET N-CH D-S 40V 8-SOIC
SIR418DP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
相关代理商/技术参数
参数描述
SIR-38EH 制造商:Russell 功能描述:
SIR401DP-T1-GE3 功能描述:MOSFET -20V 3.2mOhm@10V 50A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR402DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR402DP_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SiR402DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Intertechnologies 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):6mohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:4.2W, Operating Temperature Range:-55C to, RoHS Compliant: Yes