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参数资料
| 型号： | SIR67-21C/B/TR8 |
| 厂商： | EVERLIGHT ELECTRONICS CO LTD |
| 元件分类： | 红外LED |
| 英文描述： | 2.4 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| 封装： | ROHS COMPLIANT, PLASTIC, SMD, 2 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 227K |
| 代理商： | SIR67-21C/B/TR8 |
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2
Page: 6 of 10
Device No：DTS-067-166
Prepared date：07-20-2005
Prepared by：David Huang
SIR67-21C/B/TR8
Precautions For Use
1. Over-current-proof
Customer must apply resistors for protection , otherwise slight voltage shift will cause big
current change ( Burn out will happen ).
2. Storage
2.1 Do not open moisture proof bag before the products are ready to use.
2.2 Before opening the package, the LEDs should be kept at 30℃ or less and 90%RH or less.
2.3 The LEDs should be used within a year.
2.4 After opening the package, the LEDs should be kept at 30℃ or less and 70%RH or less.
2.5 The LEDs should be used within 168 hours (7 days) after opening the package.
2.6 If the moisture absorbent material (silica gel) has faded away or the LEDs have exceeded the
storage time, baking treatment should be performed using the following conditions.
Baking treatment : 60±5℃ for 24 hours.
3. Soldering Condition
3.1 Pb-free solder temperature profile
3.2 Reflow soldering should not be done more than two times.
3.3 When soldering, do not put stress on the LEDs during heating.
3.4 After soldering, do not warp the circuit board.
相关PDF资料 |
PDF描述 |
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| SIR67-21C/L9/TR10 | 1 ELEMENT, INFRARED LED, 875 nm |
| SIR67-21C/TR8 | 2.4 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| SIR91-21C/TR7 | 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| SIR95-21C/TR7 | 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| SK44LT/R7 | 4 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR67-21C-TR8 | 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Top Infrared LED |
| SIR688DP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 60V 3.5MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 60V 60A 8-SO 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 60V 3.5mohm@10V |
| SIR698DP-T1-GE3 | 功能描述:MOSFET 100V 7.5A 23W 195mOhm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR770DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| SIR770DP-T1-GE3 | 功能描述:MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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