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参数资料
| 型号： | SIR8314-24C |
| 厂商： | EVERLIGHT ELECTRONICS CO LTD |
| 元件分类： | 红外LED |
| 英文描述： | INFRARED LED |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/7页 |
| 文件大小： | 154K |
| 代理商： | SIR8314-24C |
Everlight Electronics Co., Ltd.
http://www.everlight.com
Rev 1
Page: 1 of 7
Device No
：DIR-0000047
Prepared date
：08-14-2008
Prepared by
：Daniel Yang
Technical Data Sheet
5mm Infrared LED, T-1 3/4
SIR8314-24C
Features
High reliability
2.54mm lead spacing
Low forward voltage
Good spectral matching
to Si photodetector
Pb free
The product itself will remain within RoHS compliant version.
Descriptions
EVERLIGHT’S Infrared Emitting Diode(SIR8314-24C)
is a high intensity diode , molded in a water clear plastic
package.
The device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
Sensor
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
SIR8314-24C
GaAlAs
Water clear
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| SIR836DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
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| SIR838DP-T1-GE3 | 功能描述:MOSFET 150V 35A 96W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIR840DP-T1-GE3 | 功能描述:MOSFET N-CHANNEL 30-V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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