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| 型号： | SIR862DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3800pF @ 10V |
| 功率 - 最大： | 69W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SIR862DP-T1-GE3DKR |
New Product
SiR862DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
V DS (V)
25
R DS(on) ( Ω )
0.0028 at V GS = 10 V
0.0035 at V GS = 4.5 V
I D (A) a, e
50
50
Q g (Typ.)
28.4 nC
Definition
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK? SO- 8
APPLICATIONS
? DC/DC Conversion
- Low-Side Switch
6.15 mm
1
S
2
S
S
5.15 mm
? Notebook
? Server
D
D
3
4
G
? Game Console
8
7
D
6
D
5
D
G
Bottom V ie w
Orderin g Information: SiR 8 62DP-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 20
50 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
50 e
32 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
22.8 b, c
70
50 e
4.7 b, c
40
80
A
mJ
T C = 25 °C
69
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
44.4
5.2 b, c
W
T A = 70 °C
3.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) f, g
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
19
1.2
24
1.8
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 65 °C/W.
e. Package limited.
f. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65672
S10-0041-Rev. A, 11-Jan-10
www.vishay.com
1
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