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| 型号： | SIR892DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 50A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.2 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2645pF @ 10V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1662 (CN2011-ZH PDF) |
| 其它名称： | SIR892DP-T1-GE3DKR |
New Product
SiR892DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0032 at V GS = 10 V
25
0.0042 at V GS = 4.5 V
PowerPAK ? SO-8
I D (A) a
50 a, g
50 a, g
Q g (Typ.)
20 nC
FEATURES
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
APPLICATIONS
? Low-Side MOSFET in Synchronous Buck dc-to-dc
Converters
6.15 mm
1
S
2
S
S
5.15 mm
- Game Machine
D
D
3
4
G
8
D
7
6
D
5
D
G
Bottom View
Ordering Information: SiR892DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 20
50 a, g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
50 g
30 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
24 b, c
70
50 g
4.5 b, c
40
80
A
mJ
T C = 25 °C
50
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
32
5.0 b, c
W
T A = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
20
2.0
25
2.5
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
Document Number: 68639
S-83048-Rev. B, 22-Dec-08
www.vishay.com
1
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