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参数资料
| 型号： | SMB10J15-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 115K |
| 代理商： | SMB10J15-E3 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88422
2
11-Mar-04
Unidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Breakdown
Maximum
Device Type
Device
Voltage
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Marking
V(BR) (V)(1)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Code
Min
Max
at IT (mA)
VWM (V)
ID (A)
(A)(2)
VC (V)
SMB10J5.0
1AD
6.40
7.82
10
5.0
1000
104.2
9.6
SMB10J5.0A
1AE
6.40
7.07
10
5.0
1000
108.7
9.2
SMB10J6.0
1AF
6.67
8.15
10
6.0
1000
87.7
11.4
SMB10J6.0A
1AG
6.67
7.37
10
6.0
1000
97.1
10.3
SMB10J6.5
1AH
7.22
8.82
10
6.5
500
81.3
12.3
SMB10J6.5A
1AK
7.22
7.98
10
6.5
500
89.3
11.2
SMB10J7.0
1AL
7.78
9.51
10
7.0
200
75.2
13.3
SMB10J7.0A
1AM
7.78
8.60
10
7.0
200
83.3
12.0
SMB10J7.5
1AN
8.33
10.2
1.0
7.5
100
69.9
14.3
SMB10J7.5A
1AP
8.33
9.21
1.0
7.5
100
77.5
12.9
SMB10J8.0
1AQ
8.89
10.9
1.0
8.0
50
66.7
15.0
SMB10J8.0A
1AR
8.89
9.83
1.0
8.0
50
73.5
13.6
SMB10J8.5
1AS
9.44
11.5
1.0
8.5
20
62.9
15.9
SMB10J8.5A
1AT
9.44
10.4
1.0
8.5
20
69.4
14.4
SMB10J9.0
1AU
10.0
12.2
1.0
9.0
10
59.2
16.9
SMB10J9.0A
1AV
10.0
11.1
1.0
9.0
10
64.9
15.4
SMB10J10
1AW
11.1
13.6
1.0
10
5.0
53.2
18.8
SMB10J10A
1AX
11.1
12.3
1.0
10
5.0
58.8
17.0
SMB10J11
1AY
12.2
14.9
1.0
11
5.0
49.8
20.1
SMB10J11A
1AZ
12.2
13.5
1.0
11
5.0
54.9
18.2
SMB10J12
1BD
13.3
16.3
1.0
12
5.0
45.5
22.0
SMB10J12A
1BE
13.3
14.7
1.0
12
5.0
50.3
19.9
SMB10J13
1BF
14.4
17.6
1.0
13
1.0
42.0
23.8
SMB10J13A
1BG
14.4
15.9
1.0
13
1.0
46.5
21.5
SMB10J14
1BH
15.6
19.1
1.0
14
1.0
38.8
25.8
SMB10J14A
1BK
15.6
17.2
1.0
14
1.0
43.1
23.2
SMB10J15
1BL
16.7
20.4
1.0
15
1.0
37.2
26.9
SMB10J15A
1BM
16.7
18.5
1.0
15
1.0
41.0
24.4
SMB10J16
1BN
17.8
21.8
1.0
16
1.0
34.7
28.8
SMB10J16A
1BP
17.8
19.7
1.0
16
1.0
38.5
26.0
SMB10J17
1BQ
18.9
23.1
1.0
17
1.0
32.8
30.5
SMB10J17A
1BR
18.9
20.9
1.0
17
1.0
36.2
27.6
SMB10J18
1BS
20.0
24.4
1.0
18
1.0
31.1
32.2
SMB10J18A
1BT
20.0
22.1
1.0
18
1.0
34.2
29.2
SMB10J20
1BU
22.2
27.1
1.0
20
1.0
27.9
35.8
SMB10J20A
1BV
22.2
24.5
1.0
20
1.0
30.9
32.4
SMB10J22
1BW
24.4
29.8
1.0
22
1.0
25.4
39.4
SMB10J22A
1BX
24.4
26.9
1.0
22
1.0
28.2
35.5
SMB10J24
1BY
26.7
32.6
1.0
24
1.0
23.3
43.0
SMB10J24A
1BZ
26.7
29.5
1.0
24
1.0
25.7
38.9
SMB10J26
1CD
28.9
35.3
1.0
26
1.0
21.5
46.6
SMB10J26A
1CE
28.9
31.9
1.0
26
1.0
23.8
42.1
SMB10J28
1CF
31.1
38.0
1.0
28
1.0
20.0
50.0
SMB10J28A
1CG
31.1
34.4
1.0
28
1.0
22.0
45.4
SMB10J30
1CH
33.3
40.7
1.0
30
1.0
18.7
53.5
SMB10J30A
1CK
33.3
36.8
1.0
30
1.0
20.7
48.4
Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
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相关代理商/技术参数 |
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| SMB10J15-E3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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