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参数资料
| 型号： | SMB10J15-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 115K |
| 代理商： | SMB10J15-E3 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88422
4
11-Mar-04
Bidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Breakdown
Maximum
Device Type
Device
Voltage
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Marking
V(BR) (V)(1)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Code
Min
Max
at IT (mA)
VWM (V)
ID (A)
(3)
(A)(2)
VC (V)
SMB8J5.0C
1AD
6.40
7.82
10
5.0
2000
83.3
9.6
SMB8J5.0CA
1AE
6.40
7.25
10
5.0
2000
87.0
9.2
SMB8J6.0C
1AF
6.67
8.15
10
6.0
2000
70.2
11.4
SMB8J6.0CA
1AG
6.67
7.37
10
6.0
2000
77.7
10.3
SMB8J6.5C
1AH
7.22
8.82
10
6.5
1000
65.0
12.3
SMB8J6.5CA
1AK
7.22
7.98
10
6.5
1000
71.4
11.2
SMB8J7.0C
1AL
7.78
9.51
10
7.0
400
60.2
13.3
SMB8J7.0CA
1AM
7.78
8.60
10
7.0
400
66.7
12.0
SMB8J7.5C
1AN
8.33
10.2
1.0
7.5
200
55.9
14.3
SMB8J7.5CA
1AP
8.33
9.21
1.0
7.5
200
62.0
12.9
SMB8J8.0C
1AQ
8.89
10.9
1.0
8.0
100
53.3
15.0
SMB8J8.0CA
1AR
8.89
9.83
1.0
8.0
100
58.8
13.6
SMB8J8.5C
1AS
9.44
11.5
1.0
8.5
40
50.3
15.9
SMB8J8.5CA
1AT
9.44
10.4
1.0
8.5
40
55.6
14.4
SMB8J9.0C
1AU
10.0
12.2
1.0
9.0
20
47.3
16.9
SMB8J9.0CA
1AV
10.0
11.1
1.0
9.0
20
51.9
15.4
SMB8J10C
1AW
11.1
13.6
1.0
10
42.6
18.8
SMB8J10CA
1AX
11.1
12.3
1.0
10
47.1
17.0
SMB8J11C
1AY
12.2
14.9
1.0
11
5.0
39.8
20.1
SMB8J11CA
1AZ
12.2
13.5
1.0
11
5.0
44.0
18.2
SMB8J12C
1BD
13.3
16.3
1.0
12
5.0
36.4
22.0
SMB8J12CA
1BE
13.3
14.7
1.0
12
5.0
40.2
19.9
SMB8J13C
1BF
14.4
17.6
1.0
13
1.0
33.6
23.8
SMB8J13CA
1BG
14.4
15.9
1.0
13
1.0
37.2
21.5
SMB8J14C
1BH
15.6
19.1
1.0
14
1.0
31.0
25.8
SMB8J14CA
1BK
15.6
17.2
1.0
14
1.0
34.5
23.2
SMB8J15C
1BL
16.7
20.4
1.0
15
1.0
29.7
26.9
SMB8J15CA
1BM
16.7
18.5
1.0
15
1.0
32.8
24.4
SMB8J16C
1BN
17.8
21.8
1.0
16
1.0
27.8
28.8
SMB8J16CA
1BP
17.8
19.7
1.0
16
1.0
30.8
26.0
SMB8J17C
1BQ
18.9
23.1
1.0
17
1.0
26.2
30.5
SMB8J17CA
1BR
18.9
20.9
1.0
17
1.0
29.0
27.6
SMB8J18C
1BS
20.0
24.4
1.0
18
1.0
24.8
32.2
SMB8J18CA
1BT
20.0
22.1
1.0
18
1.0
27.4
29.2
SMB8J20C
1BU
22.2
27.1
1.0
20
1.0
22.3
35.8
SMB8J20CA
1BV
22.2
24.5
1.0
20
1.0
24.7
32.4
SMB8J22C
1BW
24.4
29.8
1.0
22
1.0
20.3
39.4
SMB8J22CA
1BX
24.4
26.9
1.0
22
1.0
22.5
35.5
SMB8J24C
1BY
26.7
32.6
1.0
24
1.0
18.6
43.0
SMB8J24CA
1BZ
26.7
29.5
1.0
24
1.0
20.6
38.9
SMB8J26C
1CD
28.9
35.3
1.0
26
1.0
17.2
46.6
SMB8J26CA
1CE
28.9
31.9
1.0
26
1.0
19.0
42.1
SMB8J28C
1CF
31.1
38.0
1.0
28
1.0
16.0
50.0
SMB8J28CA
1CG
31.1
34.4
1.0
28
1.0
17.6
45.4
SMB8J30C
1CH
33.3
40.7
1.0
30
1.0
15.0
53.5
SMB8J30CA
1CK
33.3
36.8
1.0
30
1.0
16.5
48.4
Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
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相关代理商/技术参数 |
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| SMB10J15-E3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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