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参数资料
| 型号： | SMB10J15-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 115K |
| 代理商： | SMB10J15-E3 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88422
6
11-Mar-04
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA – Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
P
PPM
–
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1s
1.0s10s
td – Pulse Width (sec.)
100s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
SMB8J5.0C -
SMB8J40CA
SMB10J5.0 -
SMB10J40A
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I FSM
–
P
eak
F
orw
ard
Surge
Current
(A)
tp – Pulse Duration (sec)
Tr
ansient
Ther
mal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
1.0
10
100
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
–
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
tr = 10sec.
Peak Value
IPPM
Half Value – IPP
IPPM
2
td
10/1000sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t – Time (ms)
C
J–
J
unction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
10,000
10
1
100
VWM – Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-
Directional
Bi-
Directional
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相关代理商/技术参数 |
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|---|---|
| SMB10J15-E3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB10J15-E3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 1000W 15V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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