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参数资料
| 型号： | SPB100N08S2L-07 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 309K |
| 代理商： | SPB100N08S2L-07 |
2003-05-09
Page 3
SPP100N08S2-07
SPB100N08S2-07
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=100A
56
112
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
4530
1080
6020 pF
1440
Reverse transfer capacitance
Turn-on delay time
-
-
450
25
680
38
V
DD
=40V,
V
GS
=10V,
I
D
=100A,
R
G
=2.2
ns
Rise time
-
36
54
Turn-off delay time
Fall time
-
-
68
36
100
55
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=60V,
I
D
=100A
-
-
25
82
33
120
nC
Gate charge total
V
DD
=60V,
I
D
=100A,
V
GS
=0 to 10V
-
153
200
Gate plateau voltage
V
(plateau)
V
DD
=60V,
I
D
=100A
-
5.5
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
100
A
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
-
-
400
V
GS
=0V,
I
F
=80A
-
0.9
1.3
V
V
R
=40V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
-
90
290
110
360
ns
nC
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