参数资料
型号: SPP11N60C3
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS Power Transistor
中文描述: 酷MOS功率晶体管
文件页数: 8/14页
文件大小: 193K
代理商: SPP11N60C3
2001-07-05
Page 8
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
6.8 Typ. switching time
t
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=6.8
0
2
4
6
8
A
12
I
D
0
5
10
15
20
25
30
35
40
45
50
55
60
ns
70
t
tr
td(off)
td(on)
tf
13 Typ. switching time
t
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=11 A
0
10
20
30
40
50
70
R
G
0
50
100
150
200
250
ns
350
t
td(off)
td(on)
tr
tf
14 Typ. drain current slope
d
i
/d
t
= f(
R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=11A
0
20
40
60
80
120
R
G
0
500
1000
1500
2000
A/μs
3000
i
/
t
di/dt(on)
di/dt(off)
15 Typ. drain source voltage slope
d
i
/d
t
= f(
R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=11A
0
10
20
30
40
50
70
R
G
0
10000
20000
30000
40000
50000
60000
70000
80000
90000
100000
110000
V/ns
130000
v
/
t
dv/dt(on)
dv/dt(off)
相关PDF资料
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SPP11N60C2 Cool MOS⑩ Power Transistor
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