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| 型号： | SQM110N04-02L-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 40V TO263 |
| 标准包装： | 800 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 250nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9000pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 带卷 (TR) |
SQM110N04-02L
www.vishay.com
SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = 40 V
40
1.5
-
-
-
2.0
-
-
-
2.5
± 100
1
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 40 V, T J = 125 °C
-
-
50
μA
V GS = 0 V
V DS = 40 V, T J = 175 °C
-
-
250
On-State Drain Current a
I D(on)
V GS = 10 V
V DS ??? 5 V
120
-
-
A
V GS = 10 V
I D = 30 A
-
0.0019
0.0023
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V
V GS = 10 V
I D = 30 A, T J = 125 °C
I D = 30 A, T J = 175 °C
-
-
-
-
0.0037
0.0044
?
V GS = 4.5 V
I D = 20 A
-
0.0034
0.0041
Forward
Transconductance b
g fs
V DS = 15 V, I D = 30 A
-
117
-
S
Dynamic b
Input Capacitance
C iss
-
7198
9000
Output Capacitance
C oss
V GS = 0 V
V DS = 25 V, f = 1 MHz
-
1257
1575
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
878
165
1100
250
Gate-Source Charge c
Q gs
V GS = 10 V
V DS = 10 V, I D = 110 A
-
31
-
nC
Gate-Drain Charge c
Q gd
-
41
-
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 20 V, R L = 0.18 ?
I D ? 110 A, V GEN = 10 V, R g = 2.5 ?
0.55
-
-
-
-
1.1
27
27
75
25
1.65
41
41
113
38
?
ns
Source-Drain Diode Ratings and
Characteristics b
Pulsed Current a
I SM
-
-
480
A
Forward Voltage
V SD
I F = 85 A, V GS = 0 V
-
0.9
1.5
V
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2028-Rev. C, 17-Oct-11
2
Document Number: 64731
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| SQM110N04-03-GE3 | 功能描述:MOSFET 40V 110A 375W 2.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SQM110N04-03L-GE3 | 功能描述:MOSFET N-CH D-S 40V TO263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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