参数资料
型号: SS12P4C-M3/86A
厂商: Vishay General Semiconductor
文件页数: 2/5页
文件大小: 93K
描述: DIODE SCHOTTKY 12A 40V SMPC
标准包装: 1,500
系列: eSMP™
电压 - 在 If 时为正向 (Vf)(最大): 520mV @ 6A
电流 - 在 Vr 时反向漏电: 500µA @ 40V
电流 - 平均整流 (Io)(每个二极管): 6A
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-277,3-PowerDFN
供应商设备封装: TO-277A
包装: 带卷 (TR)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89141
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 13-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT AR
E SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
Vishay General Semiconductor
New Product
Notes
(3)
Pulse test: 300 μs pulse width, 1 % duty cycle
(4)
Pulse test: Pulse width ?
40 ms
Notes
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R?JA
- junction to ambient.
(2)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R?JM
- junction to mount.
Note
(1)
Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, TM
measured at the terminal of cathode
band (R?JM
= 3 °C/W)
Free air, mounted on recommended copper pad area
(R?JA
= 100 °C/W)
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 1 A
= 3 A 0.40 -
TA
= 25 °C
= 6 A 0.46 0.52
VF
(1)
IF
= 1 A
0.24 -
0.34 -
V
IF
IF
= 3 A 0.31 -
TA
= 100 °C
IF
IF
= 6 A 0.40 0.45
Reverse current per diode Rated VR
TA
= 25 °C
= 100 °C 11.9 25 mA
IR
(2)
129 500 μA
TA
Typical junction capacitance per diode 4.0 V, 1 MHz CJ
400 - pF
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS12P4C UNIT
Typical thermal resistance
R?JA (1)
100
°C/W
R?JM (2)
3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS12P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS12P4C-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
SS12P4CHM3/86A (1)
0.10 86A 1500 7" diameter plastic tape and reel
SS12P4CHM3/87A (1)
0.10 87A 6500 13" diameter plastic tape and reel
10
12
14
8
6
4
2
0
0 25 50 75 125 150100
DC Fo
r
w
ard C
u
rrent (A)
Ambient Temperature (°C)
TM
= 100 °C
(1)
TA
= 25 °C
(2)
相关PDF资料
PDF描述
VI-BNX-EU-F2 CONVERTER MOD DC/DC 5.2V 200W
71M6543G-IGT/F IC ENERGY METR 128K FLSH 100LQFP
U16DCT-E3/4W DIODE 16A 200V 35NS DUAL TO220-3
U16CCT-E3/4W DIODE ARRAY 150V 8A TO220-3
VI-BNX-EU-F1 CONVERTER MOD DC/DC 5.2V 200W
相关代理商/技术参数
参数描述
SS12P4C-M3-87A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier
SS12P4S 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SMD Photovoltaic Solar Cell Protection Schottky Rectifier
SS12P4S-M3/86A 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS12P4S-M3/87A 功能描述:肖特基二极管与整流器 12 Amp 40 Volt 280 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SS12R2 制造商:Taiwan Semiconductor 功能描述:Schottky rectifier diode, SS12 R2