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参数资料
| 型号： | SS22-E3/2CT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 93K |
| 代理商： | SS22-E3/2CT |
www.vishay.com
2
Document Number 88748
07-Jul-06
Vishay General Semiconductor
SS22 thru SS26
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) P.C.B. mounted with 0.55 x 0.55" (14 x 14 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
SS22
SS23
SS24
SS25
SS26
UNIT
Maximum instantaneous forward voltage (1) at 2.0 A
VF
0.5
0.7
V
Maximum DC reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
0.4
10
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS22
SS23
SS24
SS25
SS26
UNIT
Typical thermal resistance (1)
RθJA
RθJL
75
17
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS24-E3/52T
0.096
52T
750
7" Diameter Plastic Tape & Reel
SL24-E3/5BT
0.096
5BT
3200
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
50
70
90
110
130
150
0
0.5
1.0
1.5
2.0
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper pad areas
Resistive or
Inductive Load
SS22 - SS24
SS25 & SS26
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Figure 2. Maximum Non-Repetitive Surge Current
1
10
100
0
20
40
60
80
100
At rated TL
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| SS24-E3/55T | 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS26-E3/5T | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SS26 | 2 A, 60 V, SILICON, RECTIFIER DIODE |
| SS3P4LHG3/86A | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS3P4LHG3/87A | 3 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
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