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| 型号： | SSP-21116-010-B |
| 厂商： | DATA DEVICE CORP |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, DMA16 |
| 封装： | DIP-16 |
| 文件页数： | 11/12页 |
| 文件大小： | 185K |
| 代理商： | SSP-21116-010-B |
8
Data Device Corporation
www.ddc-web.com
SSP-21116
J-03/03-0
FIGURE 4. MECHANICAL OUTLINE FOR 10 - 15 AMP DIP PACKAGING
0.105
(2.67)
1.54
(39.12)
2.000 (MAX)
(50.8)
3.000 (MAX)
(76.20)
0.23
(5.84)
89
16
1
2.54
(64.52)
BOTTOM VIEW
SIDE VIEW
DIMENSIONS ARE IN INCHES (mm)
0.325 MAX
(8.26)
0.065 TYP
(1.65)
0.240 ±0.010 TYP
(6.10 ±0.25)
0.030
(0.76)
0.26
(6.60)
0.125 DIA
(4 HOLES)
(3.18)
1.48
(37.59)
0.45
(11.43)
PIN 1 DENOTED
BY CONTRASTING
COLORED BEAD
7 EQ. SP @
0.300 = 2.100
(7.62 = 5.33)
0.300 TYP
(7.62)
0.040 ±0.002
16 REQD
(1.02 ±0.05)
Note: See TABLE 7 for pinouts.
solely dependent on the current flowing through the device and
its "ON" resistance.
Bipolar transistors, on the other hand, have an inherent dc offset
voltage to which is added a voltage drop proportional to the
devices' "ON" resistance and the current flowing through it. It is
this inherent offset voltage that is missing from the power MOS-
FET. The Power MOSFET in many applications, leads to a lower
voltage drop and power dissipation as an SSPC switch. In addi-
tion the Power MOSFET's driver logic requirements are much
simpler, especially when multiple MOSFET's are used, as in the
SSPC product.
NO SECONDARY BREAKDOWN, AND PARALLELING
SSPC'S
A bipolar transistor has a set of current voltage limits that form an
envelope that cannot be exceeded; this is known as the safe
operating area of the device. If this envelope is exceeded local
hot spots will occur. These hot spots conduct currents more read-
ily then adjacent cool areas and tend to become hotter. This ther-
mal runaway, or
secondary breakdown, leads to the ultimate
destruction of the device.
The Power MOSFET's have the opposite characteristics from
that of thermal runaway in bipolar devices. A local hot spot will
steer current away from itself as its resistance in this area goes
up. This results in even current sharing throughout the entire
device, thereby eliminating hot spots. The inherent advantage of
not having secondary breakdown is that the entire MOSFET has
to exceed its temperature limitations before damage results. This
characteristic makes the Power MOSFET more rugged when
used for power switching then bipolar devices.
TABLE 7. PINOUTS FOR FIGURE 4.
PIN
FUNCTION
PIN
FUNCTION
1
2
3
4
5
6
7
8
POWER OUT
SLEW CONTROL
NC
16
15
14
13
12
11
10
9
POWER IN
BIAS SUPPLY COMMON
BIAS SUPPLY INPUT
STATUS 1
STATUS 2
CONTROL COMMAND
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