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参数资料
| 型号： | SSP-21116-010-B |
| 厂商： | DATA DEVICE CORP |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, DMA16 |
| 封装： | DIP-16 |
| 文件页数： | 6/12页 |
| 文件大小： | 185K |
| 代理商： | SSP-21116-010-B |
3
Data Device Corporation
www.ddc-web.com
SSP-21116
J-03/03-0
+150
°C
Junction Temperature
-1000 to +1000
Vdc
Pin-to-case
-0.5 to +7.0
Vdc
V Bias voltage (see note 4)
Vdc
VALUE
UNIT
PARAMETER
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER
UNIT
VALUE
Vdc
+60.0 to +300.0
0 to V Bias
-300 to +300
V Bias voltage (see note 4)
Vdc
+4.5 to +5.5
TABLE 2. RECOMMENDED OPERATING CONDITIONS
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
450 continuous
500 Volts, 50ms transient
-0.5 to +7.0
-1000 to +1000
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
TABLE 3. SSP-21116 SPECIFICATIONS
(SEE NOTES 1 AND 2)
PARAMETER
CONDITIONS
UNIT
VALUE
CONTROL CIRCUIT
Logic Type
TTL/CMOS
compatible
V Bias Supply Current
VCC = 4.5 to 5.5Vdc
mA
25 typ
Control Turn-On Voltage
V
2.0 to 5.5
Control Turn-Off Voltage
V
-0.5 to 0.8
Control Input Current
control voltage = 5.0V
A
50 max
Control Input Current
control voltage = 2.4V
A
50 max
Control Input Current
control voltage = 0.8V
A
-50 min
Status Output Voltage
VCC= 4.5V, IOL= 2.5mA
V
0.4 max
Status Output Voltage
VCC= 4.5V, IOH= -1.0mA
V
2.4 min
Status Truth Table
see TABLE 5
POWER CIRCUIT
Power Out Voltage with
Switch OFF
Power In = 60 - 300V
No Load
V
30 max
Max. Continuous Current
See Table 4
“On” Resistance
See Table 4
Power Dissipation
See Table 4
Power Out Leakage
Current to Power Ground
Power In = 60 - 300V
(see note 2 )
mA/A
0.1 max
Max Load Capacitance
for Start-Up
Power In = 60 - 300V
(see note 2 )
F/A
4 typ
Signal to Neutral Ground
Isolation
at 100Vdc
pF
1000 typ
Output Capacitance
see note 2
pF/A
300 typ
Trip Reset Time
ms
30 min
Rupture Capacity
Unlimited
A
Unlimited
TABLE 3. SSP-21116 SPECIFICATIONS (CONT.)
(SEE NOTES 1 AND 2)
PARAMETER
POWER CIRCUIT
(CONTINUED)
CONDITIONS
UNIT
VALUE
Output-to Input Parasitic
Diode, Forward Voltage
at Continuous Current
Power Out Voltage >
Power In Voltage
V
1.8 max
Isolation Resistance,
Any Pin to Case
Pin-to-Case Voltage =
100Vdc
M
50 min
Isolation Resistance
Power Ground to
Signal Ground
Power Ground to Signal
Ground Voltage =
500Vdc
M
50 min
Voltage Drop
across pins 6&7, 9&10 Vdc
see note 3
Trip Characteristics
see FIGURE 2
Response Time
see FIGURE 3
TEMPERATURE RANGE
Operating (Baseplate)
Storage
°C
-55 to +85
-55 to +125
THERMAL RESISTANCE
Case to Sink (
θ
CS)
Case to Ambient (
θ
CA)
°C/W
0.4
6
Temperature Rise,
Junction-to-Case
Rated Load
°C
10
PHYSICAL
CHARACTERISTICS
Size
Weight
see FIGURE 4
g
115
Note: Power Ground = Neutral; Bias Supply Common = Signal Ground
TABLES 1-3 notes:
1. -55°C
≤ Case Temperature ≤ 125°C.
2. “A” is Amps of Rated SSPC Current.
3. For 2A, 5A, and 10A units the value is 1V max; for 115A unit the value is 1.5V
max.
4. An external 0.1f ceramic capacitor from V Bias to the +5V return ground is
recommended.
TABLE 4. POWER DISSIPATION
PART NUMBER
I-MAX*(AMPS)
“ON” RESISTANCE
(OHMS)**
POWER
DISSIPATION
(WATTS)**
SSP-21116-015-X
SSP-21116-010-X
15
10
0.085
19.3
8.7
* I-MAX is the maximum continuous current.
** Specified for -55°C to +105°C; increases 0.6%/°C between +105°C and
+125°C.
Note: Other Amp ratings are available, consult factory.
+300
°C
Lead Temperature (soldering)
Power In to Power Ground
V
0 to 300
Output-to Input Parasitic
Diode, Continuous
Current Per Amp Of
Rated Current
Power Out Voltage >
Power In Voltage
A
1.0 typ
Output-to Input Parasitic
Diode, Pulsed Current
Per Amp Of Rated
Current
Power Out Voltage
>
Power In Voltage Pulse
Width
≤ 100S
A
4.0 typ
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