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参数资料
| 型号： | SST25VF020B-80-4I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 22/35页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 2MB 80MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 80MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF020B
Data Sheet
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to the BP1, BP0, and BPL bits of the status
register. CE# must be driven low before the command sequence of the WRSR instruction is entered
and driven high before the WRSR instruction is executed. See Figure 20 for EWSR or WREN and
WRSR for byte-data input sequences.
Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to
“1”. When the WP# is low, the BPL bit can only be set from “0” to “1” to lock-down the status register,
but cannot be reset from “1” to “0”. When WP# is high, the lock-down function of the BPL bit is disabled
and the BPL, BP0, and BP1 bits in the status register can all be changed. As long as BPL bit is set to 0
or WP# pin is driven high (V IH ) prior to the low-to-high transition of the CE# pin at the end of the WRSR
instruction, the bits in the status register can all be altered by the WRSR instruction. In this case, a sin-
gle WRSR instruction can set the BPL bit to “1” to lock down the status register as well as altering the
BP0, BP1, and BP2 bits at the same time. See Table 2 for a summary description of WP# and BPL
functions.
CE#
SCK
MODE 3
MODE 0
0 1 2 3 4 5 6 7
MODE 3
MODE 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
STATUS
REGISTER IN
SI
SO
MSB
50 or 06
01
MSB
HIGH IMPEDANCE
7 6 5 4 3 2 1 0
MSB
1417 EWSR.0
Figure 20: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and
Write-Status-Register (WRSR) Byte-Data Input Sequence
The Write-Status-Register instruction also writes new values to the Status Register 1. To write values
to Status Register 1, the WRSR sequence needs a word-data input—the first byte being the Status
Register bits, followed by the second byte Status Register 1 bits. CE# must be driven low before the
command sequence of the WRSR instruction is entered and driven high before the WRSR instruction
is executed. See Figure 21 for EWSR or WREN and WRSR instruction word-data input sequences.
Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to
‘1’. When the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to lock-down the status registers,
but cannot be reset from ‘1’ to ‘0’. When WP# is high, the lock-down function of the BPL bit is disabled
and the BPL, BP0, BP1, TSP, and BSP bits in the status register can all be changed. As long as BPL
bit is set to 0 or WP# pin is driven high (V IH ) prior to the low-to-high transition of the CE# pin at the end
of the WRSR instruction, the bits in the status register can all be altered by the WRSR instruction. In
this case, a single WRSR instruction can set the BPL bit to “1” to lock down the status register as well
as altering the BPL, BP0, BP1, TSP, and BSP bits at the same time. See Table 2 for a summary
description of WP# and BPL functions.
?2012 Silicon Storage Technology, Inc.
22
DS25054A
01/12
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| SST25VF020B-80-4I-QAE-T | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-SAE | 功能描述:闪存 2M (256Kx8) 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-SAE | 制造商:Microchip Technology Inc 功能描述:MEMORY FLASH 2M SPI 8SOIC |
| SST25VF020B-80-4I-SAE-T | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF032B | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:32 Mbit SPI Serial Flash |
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