参数资料
型号: SST25VF064C-80-4C-Q2AE
厂商: Microchip Technology
文件页数: 28/37页
文件大小: 0K
描述: IC FLASH SER 64M DUAL I/O 8WSON
标准包装: 480
系列: SST25
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(8M x 8)
速度: 80MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WSON
包装: 管件
64 Mbit SPI Serial Dual I/O Flash
A Microchip Technology Company
SST25VF064C
Data Sheet
Table 12: DC Operating Characteristics (VDD = 2.7-3.6V)
Limits
Symbol Parameter
Min
Max Units Test Conditions
I DDR
I DDR2
I DDR3
Read Current
High-Speed Read Current
Fast-Read Dual-Output/Dual I/
12
25
25
mA
mA
mA
CE# = 0.1 V DD /0.9 V DD @33 MHz, SO = open
CE# = 0.1 V DD /0.9 V DD @80 MHz, SO = open
CE# = 0.1 V DD /0.9 V DD @75/50 MHz
O Current
I DDW
I SB1
I LI
I LO
V IL
V IH
V OL
V OH
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
0.7 V DD
V DD -0.2
25
20
1
1
0.8
0.2
mA
μA
μA
μA
V
V
V
V
CE# = V DD
CE# = V DD , V IN = V DD or V SS
V IN = GND to V DD , V DD = V DD Max
V OUT = GND to V DD , V DD = V DD Max
V DD = V DD Min
V DD = V DD Max
I OL = 100 μA, V DD = V DD Min
I OH = -100 μA, V DD = V DD Min
T12.0 25036
Table 13: Capacitance (T A = 25°C, f = 1 Mhz, other pins open)
Parameter
C OUT1
Description
Output Pin Capacitance
Test Condition
V OUT = 0V
Maximum
12 pF
C IN
1
Input Capacitance
V IN = 0V
6 pF
T13.0 25036
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
N END
T DR1
I LTH1
1
Endurance
Data Retention
Latch Up
10,000
100
100 + I DD
Cycles
Years
mA
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T14.0 25036
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
?2011 Silicon Storage Technology, Inc.
28
DS25036A
06/11
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