- 您现在的位置：买卖IC网 > PDF目录4242 > SST25VF080B-80-4C-QAE-T (Microchip Technology)IC FLASH SER 8MB 50MHZ SPI 8WSON PDF资料下载
参数资料
| 型号： | SST25VF080B-80-4C-QAE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 2/37页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 8MB 50MHZ SPI 8WSON |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 8M（1M x 8） |
| 速度： | 80MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 带卷 (TR) |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
8 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF080B
Data Sheet
Product Description
SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low
pin-count package which occupies less board space and ultimately lowers total system costs. The
SST25VF080B devices are enhanced with improved operating frequency and lower power consump-
tion. SST25VF080B SPI serial flash memories are manufactured with SST’s proprietary, high-perfor-
mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches.
The SST25VF080B devices significantly improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for
SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), 8-contact
WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2 for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25045A
09/11
相关PDF资料 |
PDF描述 |
|---|---|
| 25AA256T-I/SN | IC EEPROM 256KBIT 10MHZ 8SOIC |
| FMC28DRXN | CONN EDGECARD 56POS DIP .100 SLD |
| FMC28DRXH | CONN EDGECARD 56POS DIP .100 SLD |
| FSM28DSEI | CONN EDGECARD 56POS .156 EYELET |
| ACC49DRYI-S734 | CONN EDGECARD 98POS DIP .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF080B-80-4C-QAF | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8 Mbit SPI Serial Flash |
| SST25VF080B-80-4C-S2AE | 功能描述:闪存 8M (1Mx8) 80MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF080B-80-4C-S2AE-T | 功能描述:闪存 2.7V to 3.6V 8Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF080B-80-4C-S2AF | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:8 Mbit SPI Serial Flash |
| SST25VF080B-80-4C-SAE | 功能描述:闪存 2.7V to 3.6V 16Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。