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参数资料
| 型号： | SST25VF512-20-4C-SAE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 7/29页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 512K 20MHZ 8SOIC |
| 标准包装： | 2,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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512 Kbit SPI Serial Flash
A Microchip Technology Company
SST25VF512
Data Sheet
Status Register
The software status register provides status on whether the flash memory array is available for any
Read or Write operation, whether the device is Write enabled, and the state of the memory Write pro-
tection. During an internal Erase or Program operation, the status register may be read only to deter-
mine the completion of an operation in progress. Table 4 describes the function of each bit in the
software status register.
Busy
The Busy bit determines whether there is an internal Erase or Program operation in progress. A “1” for
the Busy bit indicates the device is busy with an operation in progress. A “0” indicates the device is
ready for the next valid operation.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal memory Write Enable Latch. If the
Write-Enable-Latch bit is set to “1”, it indicates the device is Write enabled. If the bit is set to “0” (reset),
it indicates the device is not Write enabled and does not accept any memory Write (Program/Erase)
commands. The Write-Enable-Latch bit is automatically reset under the following conditions:
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Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming reached its highest memory address
Sector-Erase instruction completion
Block-Erase instruction completion
Chip-Erase instruction completion
Block Protection (BP1, BP0)
The Block-Protection (BP1, BP0) bits define the size of the memory area, as defined in Table 3, to be
software protected against any memory Write (Program or Erase) operations. The Write-Status-Regis-
ter (WRSR) instruction is used to program the BP1 and BP0 bits as long as WP# is high or the Block-
Protect-Lock (BPL) bit is 0. Chip-Erase can only be executed if Block-Protection bits are both 0. After
power-up, BP1 and BP0 are set to 1.
?2011 Silicon Storage Technology, Inc.
7
DS25076A
10/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF512A | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit SPI Serial Flash |
| SST25VF512A-33-4C-QAE | 功能描述:闪存 512K (64K X 8) 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4C-QAE-T | 功能描述:闪存 2.7V to 3.6V 512Kbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4C-SAE | 功能描述:闪存 512K (64Kx8) 33MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4C-SAE | 制造商:Microchip Technology Inc 功能描述:MEMORY FLASH 512K SPI 8SOIC |
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