参数资料
型号: SST25WF080-75-4I-SAF-T
厂商: Microchip Technology
文件页数: 7/33页
文件大小: 0K
描述: I CFLASH SER 8MN 75MHZ SPI 8SOIC
标准包装: 3,300
系列: SST25
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 8M(1M x 8)
速度: 75MHz
接口: SPI 串行
电源电压: 1.65 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
8 Mbit 1.8V SPI Serial Flash
A Microchip Technology Company
SST25WF080
Not Recommended for New Designs
Reset/Hold Mode
The RST#/HOLD# pin provides either a hardware reset or a hold pin. From power-on, the RST#/
HOLD# pin defaults as a hardware reset pin (RST#). The Hold mode for this pin is a user selected
option where an Enable-Hold instruction enables the Hold mode. Once selected as a hold pin
(HOLD#), the RST#/HOLD# pin will be configured as a HOLD# pin, and goes back to RST# pin only
after a power-off and power-on sequence.
Reset
If the RST#/HOLD# pin is used as a reset pin, RST# pin provides a hardware method for resetting the
device. Driving the RST# pin high puts the device in normal operating mode. The RST# pin must be
driven low for a minimum of T RST time to reset the device. The SO pin is in high impedance state while
the device is in reset. A successful reset will reset the status register to its power-up state. See Table 4
for default power-up modes. A device reset during an active Program or Erase operation aborts the
operation and data of the targeted address range may be corrupted or lost due to the aborted erase or
program operation. The device exits AAI Programming Mode in progress and places the SO pin in high
impedance state.
CE#
T RECR
T RECP
T REC E
SCK
T RST
RST#
T RHZ
SO
SI
1203 F04.0
Figure 5: Reset Timing Diagram
Table 2: Reset Timing Parameters
Symbol
Parameter
Min
Max
Units
T RST
1
Reset Pulse Width
100
ns
T RHZ
T RECR
T RECP
T RECE
Reset to High-Z Output
Reset Recovery from Read
Reset Recovery from Program
Reset Recovery from Erase
107
100
10
1
ns
ns
μs
ms
T2.25024
1. For reset while in a Programming or Erase mode, the reset pulse must be >5μs
?2012 Silicon Storage Technology, Inc.
7
DS25024B
03/12
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