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参数资料
| 型号： | SST26VF016-80-5C-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 16/39页 |
| 文件大小： | 0K |
| 描述： | IC FLSH SER 16MB 80MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Set Burst
The Set Burst command specifies the number of bytes to be output during a Read Burst command
before the device wraps around. To set the burst length the host drives CE# low, sends the Set Burst
command cycle (C0H) and one data cycle, then drives CE# high. A cycle is two nibbles, or two clocks,
long, most significant nibble first. After power-up or reset, the burst length is set to eight Bytes (00H).
See Table 4 for burst length data and Figure 12 for the sequence.
Table 4: Burst Length Data
Burst Length
8 Bytes
16 Bytes
32 Bytes
64 Bytes
High Nibble (H0)
0h
0h
0h
0h
Low Nibble (L0)
0h
1h
2h
3h
T4.0 25017
CE#
MODE 3
0
1
2
3
SCK
SIO(3:0)
MODE 0
C1 C0 H0 L0
MSN LSN
1359 F32.0
Note: MSN = Most Significant Nibble,
LSN = Least Significant Nibble
Figure 12: Set Burst Length Sequence
Read Burst
To execute a Read Burst operation the host drives CE# low, then sends the Read Burst command
cycle (0CH), followed by three address cycles, and then one dummy cycle. Each cycle is two nibbles
(clocks) long, most significant nibble first.
After the dummy cycle, the device outputs data on the falling edge of the SCK signal starting from the
specified address location. The data output stream is continuous through all addresses until termi-
nated by a low-to-high transition on CE#.
During Read Burst, the internal address pointer automatically increments until the last byte of the burst
is reached, then jumps to first byte of the burst. All bursts are aligned to addresses within the burst
length, see Table 5. For example, if the burst length is eight Bytes, and the start address is 06h, the
burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern would repeat
until the command was terminated by a low-to-high transition on CE#.
During this operation, blocks that are Read-locked will output data 00H.
Table 5: Burst Address Ranges
Burst Length
8 Bytes
16 Bytes
32 Bytes
64 Bytes
Burst Address Ranges
00-07H, 08-0FH, 10-17H, 18-1FH...
00-0FH, 10-1FH, 20-2FH, 30-3FH...
00-1FH, 20-3FH, 40-5FH, 60-7FH...
00-3FH, 40-7FH, 80-BFH, C0-FFH
T5.0 25017
?2011 Silicon Storage Technology, Inc.
16
DS-25017A
04/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26VF016-80-5C-S2AE | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QAE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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