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参数资料
| 型号： | SST26VF016-80-5C-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 19/39页 |
| 文件大小： | 0K |
| 描述： | IC FLSH SER 16MB 80MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Quad J-ID Read (SQI Protocol)
The Quad J-ID Read instruction identifies the devices as SST26VF016/032 and manufacturer as SST.
To execute a Quad J-ID operation the host drives CE# low and then sends the Quad J-ID command
cycle (AFH). Each cycle is two nibbles (clocks) long, most significant nibble first.
Immediately following the command cycle the device outputs data on the falling edge of the SCK sig-
nal. The data output stream is continuous until terminated by a low-to-high transition of CE#. The
device outputs three bytes of data: manufacturer, device type, and device ID, see Table 6. See Figure
14 for instruction sequence.
CE#
MODE 3
0
2
4
6
8
10
12
N
SCK
MODE 0
SIO(3:0)
C1 C0 H0 L0 H1 L1 H2 L2 H0 L0 H1 L4 H2 L2
MSN LSN
HN LN
BFH
26H
Device ID
BFH
26H
Device ID
N
1359 F39.0
Note: MSN = Most significant Nibble; LSN= Least Significant Nibble
C[1:0]=AFH
Figure 14: Quad J-ID Read Sequence
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to ‘1,’ but it does not change
a protected memory area. Prior to any write operation, the Write-Enable (WREN) instruction must be
executed.
To execute a Sector-Erase operation, the host drives CE# low, then sends the Sector Erase command
cycle (20H) and three address cycles, and then drives CE# high. Each cycle is two nibbles, or clocks,
long, most significant nibble first. Address bits [A MS :A 12 ] (A MS = Most Significant Address) determine
the sector address (SA X ); the remaining address bits can be V IL or V IH . Poll the BUSY bit in the Status
register or wait T SE for the completion of the internal, self-timed, Sector-Erase operat i on. See Figure
15 for the Sector-Erase sequence.
CE#
MODE 3
0
1
2
4
6
SCK
SIO(3:0)
MODE 0
C1 C0 A5 A4 A3 A2 A1 A0
MSN LSN
1359 F07.0
Note: MSN = Most Significant
Nibble, LSN = Least Signifi-
cant Nibble
Figure 15: 4 KByte Sector-Erase Sequence
?2011 Silicon Storage Technology, Inc.
19
DS-25017A
04/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26VF016-80-5C-S2AE | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QAE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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