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参数资料
| 型号： | SST38VF6401-90-5I-B3KE |
| 厂商： | Microchip Technology |
| 文件页数： | 12/64页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 90NS 48TFBGA |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 480 |
| 系列： | SST38 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 托盘 |
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64 Mbit (x16) Advanced Multi-Purpose Flash Plus
A Microchip Technology Company
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
To resume a suspended Sector-Erase or Block-Erase operation, the system must issue the Erase-
Resume command. The operation is executed by issuing one byte command sequence with Erase-
Resume command (30H) at any address in the last Byte sequence.
When an erase operation is suspended, or re-suspended, after resume the cumulative time needed for
the erase operation to complete is greater than the erase time of a non-suspended erase operation. If
the hold time from Erase-Resume to the next Erase- Suspend operation is less than 200μs, the accu-
mulative erase time can become very long Therefore, after issuing an Erase-Resume command, the
system must wait at least 200μs before issuing another Erase-Suspend command. The Erase-Resume
command will be ignored until any program operations initiated during Erase-Suspend are complete.
Bypass mode can be entered while in Erase-Suspend, but only Bypass Word-Program is available for
those sectors or blocks that are not suspended. Bypass Sector-Erase, Bypass Block-Erase, and
Bypass Chip-Erase, Erase-Suspend, and Erase-Resume are not available. In order to resume an
Erase operation, the Bypass mode must be exited before issuing Erase-Resume. For more information
about Bypass mode, see “Bypass Mode” on page 17.
Chip-Erase Operation
The SST38VF6401/6402/6403/6404 devices provide a Chip-Erase operation, which erases the entire
memory array to the ‘1’ state. This operation is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase
command (10H) at address 555H in the last byte sequence. The Erase operation begins with the rising
edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid reads
are Toggle Bit, Data# Polling, or RY/BY#. See Table 11 for the command sequence, Figure 13 for tim-
ing diagram, and Figure 29 for the flowchart. Any commands issued during the Chip-Erase operation
are ignored. If WP# is low, or any VPBs or NVPBs are in the protect state, any attempt to execute a
Chip-Erase operation is ignored. During the command sequence, WP# should be statically held high
or low.
Write Operation Status Detection
To optimize the system Write cycle time, the SST38VF6401/6402/6403/6404 provide two software
means to detect the completion of a Write (Program or Erase) cycle The software detection includes
two status bits: Data# Polling (DQ 7 ) and Toggle Bit (DQ 6 ). The End-of-Write detection mode is enabled
after the rising edge of WE#, which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system. Therefore, Data# Poll-
ing or Toggle Bit maybe be read concurrent with the completion of the write cycle. If this occurs, the
system may possibly get an incorrect result from the status detection process. For example, valid data
may appear to conflict with either DQ 7 or DQ 6 . To prevent false results, upon detection of failures, the
software routine should loop to read the accessed location an additional two times. If both reads are
valid, then the device has completed the Write cycle, otherwise the failure is valid.
For the Write-Buffer Programming feature, DQ 1 informs the user if either the Write-to-Buffer or Pro-
gram Buffer-to-Flash operation aborts. If either operation aborts, then DQ 1 = 1. DQ 1 must be cleared to
'0' by issuing the Write-to-Buffer Abort Reset command.
The SST38VF6401/6402/6403/6404 also provide a RY/BY# signal. This signal indicates the status of a
Program or Erase operation.
?2011 Silicon Storage Technology, Inc.
12
DS-25015A
04/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST38VF6401-90-5I-B3KE-T | 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+ |
| SST38VF6401-90-5I-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401B | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64 Mbit (x16) Advanced Multi-Purpose Flash Plus |
| SST38VF6401B-70-5I-B3KE | 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401B-70-5I-B3KE-T | 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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