参数资料
型号: SST38VF6401-90-5I-B3KE
厂商: Microchip Technology
文件页数: 29/64页
文件大小: 0K
描述: IC FLASH MPF 64MBIT 90NS 48TFBGA
特色产品: SST Serial and Parallel Flash Memory
标准包装: 480
系列: SST38
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(4M x 16)
速度: 90ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFBGA
供应商设备封装: 48-TFBGA
包装: 托盘
64 Mbit (x16) Advanced Multi-Purpose Flash Plus
A Microchip Technology Company
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
Table 14: System Interface Information for SST38VF6401/6402/6403/6404
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0003H
0003H
0004H
0005H
0001H
0003H
0001H
0001H
Description
V DD Min (Program/Erase)
DQ 7 -DQ 4 : Volts, DQ 3 -DQ 0 : 100 millivolts
V DD Max (Program/Erase)
DQ 7 -DQ 4 : Volts, DQ 3 -DQ 0 : 100 millivolts
V PP min. (00H = no V PP pin)
V PP max. (00H = no V PP pin)
Typical time out for Word-Program 2 N μs (2 3 = 8 μs)
Typical time out for min. size buffer program 2 N μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2 N ms (2 4 = 16 ms)
Typical time out for Chip-Erase 2 N ms (2 5 = 32 ms)
Maximum time out for Word-Program 2 N times typical (2 1 x 2 3 = 16 μs)
Maximum time out for buffer program 2 N times typical
Maximum time out for individual Sector/Block-Erase 2 N times typical (2 1 x 2 4 = 32 ms)
Maximum time out for Chip-Erase 2 N times typical (2 1 x 2 5 = 64 ms)
T14.0 25015
Table 15: Device Geometry Information for SST38VF6401/6402/6403/6404
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0017H
0001H
0000H
0005H
0000H
0002H
00FFH
0003H
0000H
0001H
007FH
0000H
0000H
0001H
Description
Device size = 2 N Bytes (17H = 23; 2 23 = 8 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of bytes in multi-byte write = 2 N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 2047 + 1 = 2048 sectors (03FFH = 1023)
z = 32 x 256 Bytes = 8 KBytes/sector (0100H = 32)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y =127 + 1 = 128 blocks (007FH = 127)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T15.1 25015
?2011 Silicon Storage Technology, Inc.
29
DS-25015A
04/11
相关PDF资料
PDF描述
A3PN015-2QNG68 IC FPGA NANO 15K GATES 68-QFN
A3PN030-ZQNG68 IC FPGA NANO 30K GATES 68-QFN
A3PN015-1QNG68 IC FPGA NANO 15K GATES 68-QFN
A3PN030-ZQNG48 IC FPGA NANO 30K GATES 48-QFN
ESA50DTAD CONN EDGECARD 100PS R/A .125 SLD
相关代理商/技术参数
参数描述
SST38VF6401-90-5I-B3KE-T 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+
SST38VF6401-90-5I-EKE 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401B 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401B-70-5I-B3KE 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST38VF6401B-70-5I-B3KE-T 功能描述:闪存 2.7- 3.6V 64Mbit pm Parallel Advance MPF RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel