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参数资料
| 型号： | SST39VF3202B-70-4I-EKE |
| 厂商： | Microchip Technology |
| 文件页数： | 1/29页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 32MBIT 70NS 48TSOP |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 96 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 32M（2M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 48-TSOP |
| 包装： | 管件 |
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32 Mbit (x16) Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
SST39VF640xB2.7V 64Mb (x16) MPF+ memories
FEATURES:
? Organized as 2M x16
? Single Voltage Read and Write Operations
– 2.7-3.6V
? Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
? Low Power Consumption (typical values at 5 MHz)
– Active Current: 6 mA (typical)
– Standby Current: 4 μA (typical)
– Auto Low Power Mode: 4 μA (typical)
? Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF3202B
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF3201B
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Chip-Erase Capability
? Erase-Suspend/Erase-Resume Capabilities
? Hardware Reset Pin (RST#)
PRODUCT DESCRIPTION
The SST39VF320xB devices are 2M x16 CMOS Multi-
Purpose Flash Plus (MPF+) manufactured with SST’s pro-
prietary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF320xB write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for
x16 memories.
Featuring high performance Word-Program, the
SST39VF320xB devices provide a typical Word-Program
time of 7 μsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF320xB devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
?2009 Silicon Storage Technology, Inc.
S71384-01-000 1/09
1
Data Sheet
? Security-ID Feature
– SST: 128 bits; User: 128 words
? Fast Read Access Time:
– 70 ns
? Latched Address and Data
? Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 35 ms (typical)
– Word-Program Time: 7 μs (typical)
? Automatic Write Timing
– Internal V PP Generation
? End-of-Write Detection
– Toggle Bits
– Data# Polling
? CMOS I/O Compatibility
? JEDEC Standard
– Flash EEPROM Pin Assignments
? Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
? All non-Pb (lead-free) devices are RoHS compliant
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high-density, surface mount requirements, the
SST39VF320xB devices are offered in 48-lead TSOP and
48-ball TFBGA packages. See Figure 2 and Figure 3 for
pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39VF3202C-70-4I-B3KE | 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF3202C-70-4I-B3KE-T | 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF3202C-70-4I-EKE | 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF3202C-70-4I-EKE-T | 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF320-70-4C-B3K | 功能描述:闪存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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