- 您现在的位置：买卖IC网 > PDF目录21108 > SST39VF6402B-70-4I-B1KE-T (Microchip Technology)IC FLASH MPF 64MBIT 70NS 48TFBGA PDF资料下载
参数资料
| 型号： | SST39VF6402B-70-4I-B1KE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 2/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 70NS 48TFBGA |
| 标准包装： | 2,000 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 带卷 (TR) |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
64 Mbit Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF6401B / SST39VF6402B
Not Recommended for New Designs
Product Description
The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Pro-
gram time of 7 μsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Pro-
gram operation. To protect against inadvertent write, they have on-chip hardware and Software Data
Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39VF640xB devices are suited for applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all system applications, they significantly improve
performance and reliability, while lowering power consumption. They inherently use less energy during
Erase and Program than alternative flash technologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative flash technologies. These devices also
improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead
TSOP and 48-ball TFBGA packages. See Figures and 2 for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25008A
08/11
相关PDF资料 |
PDF描述 |
|---|---|
| P51-1000-A-F-P-4.5V-000-000 | SENSOR 1000PSI 1/4-18NPT .5-4.5V |
| REC5-2409DRW/H2/A/M/SMD/CTRL-R | CONV DC/DC 5W 18-36VIN +/-09VOUT |
| P51-300-A-A-P-4.5OVP-000-000 | SENSOR 300PSI 1/4-18NPT .5-4.5V |
| P51-1000-S-R-M12-20MA-000-000 | SENSOR 1000PSIS M12 4-20 MA |
| FAD1-08025CBJW11 | FAN 80X25MM 12VDC BALL WIRE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39VF6402B-70-4I-EKE | 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800-90-4C-EK | 制造商:SILICON STORAGE TECH 功能描述: 制造商:Silicon Storage Technology (SST) 功能描述: |
| SST39VF800A-70-4A-B3KE | 功能描述:闪存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800A-70-4A-EKE | 功能描述:闪存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800A-70-4C-B3K | 功能描述:闪存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。