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参数资料
| 型号： | SST39VF6402B-70-4I-B1KE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 8/36页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 70NS 48TFBGA |
| 标准包装： | 2,000 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 带卷 (TR) |
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64 Mbit Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF6401B / SST39VF6402B
Not Recommended for New Designs
Data# Polling (DQ 7 )
When the SST39VF640xB are in the internal Program operation, any attempt to read DQ 7 will produce
the complement of the true data. Once the Program operation is completed, DQ 7 will produce true
data. Note that even though DQ 7 may have valid data immediately following the completion of an internal Write
operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subse-
quent successive Read cycles after an interval of 1 μs. During internal Erase operation, any attempt to read
DQ 7 will produce a ‘0’. Once the internal Erase operation is completed, DQ 7 will produce a ‘1’. The
Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For
Sector-, Block- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#)
pulse. See Figure 6 for Data# Polling timing diagram and Figure 20 for a flowchart.
Toggle Bits (DQ6 and DQ2)
During the internal Program or Erase operation, any consecutive attempts to read DQ 6 will produce
alternating “1”s and “0”s, i.e., toggling between 1 and 0. When the internal Program or Erase operation
is completed, the DQ 6 bit will stop toggling. The device is then ready for the next operation. For Sector-
, Block-, or Chip-Erase, the toggle bit (DQ 6 ) is valid after the rising edge of sixth WE# (or CE#) pulse.
DQ 6 will be set to “1” if a Read operation is attempted on an Erase-Suspended Sector/Block. If Pro-
gram operation is initiated in a sector/block not selected in Erase-Suspend mode, DQ 6 will toggle.
An additional Toggle Bit is available on DQ 2 , which can be used in conjunction with DQ 6 to check
whether a particular sector is being actively erased or erase-suspended. Table 2 shows detailed status
bits information. The Toggle Bit (DQ 2 ) is valid after the rising edge of the last WE# (or CE#) pulse of
Write operation. See Figure 7 for Toggle Bit timing diagram and Figure 20 for a flowchart.
Table 2: Write Operation Status
Status
DQ 7
DQ 6
DQ 2
Normal Operation
Erase-Suspend
Mode
Standard Program
Standard Erase
Read from Erase-Suspended Sector/Block
Read from Non- Erase-Suspended Sector/Block
Program
DQ 7 #
0
1
Data
DQ 7 #
Toggle
Toggle
1
Data
Toggle
No Toggle
Toggle
Toggle
Data
N/A
T2.0 25008
Note: DQ 7 and DQ 2 require a valid address when reading status information.
?2011 Silicon Storage Technology, Inc.
8
DS25008A
08/11
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| SST39VF6402B-70-4I-EKE | 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800-90-4C-EK | 制造商:SILICON STORAGE TECH 功能描述: 制造商:Silicon Storage Technology (SST) 功能描述: |
| SST39VF800A-70-4A-B3KE | 功能描述:闪存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800A-70-4A-EKE | 功能描述:闪存 8M (512Kx16) 70ns Automotive Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF800A-70-4C-B3K | 功能描述:闪存 512K X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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