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参数资料
| 型号： | SST39VF801C-70-4C-MAQE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 7/38页 |
| 文件大小： | 0K |
| 描述： | IC MPF FLASH 8MBIT CMOS 48WFBGA |
| 标准包装： | 2,500 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 8M（512K x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-WFBGA |
| 供应商设备封装： | 48-WFBGA（6x4） |
| 包装： | 带卷 (TR) |
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8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C
Data Sheet
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written
to the device using standard microprocessor write sequences. A command is written by asserting WE#
low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever
occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
The SST39VF801C/802C and SST39LF801C/802C also have the Auto Low Power mode which puts
the device in a near standby mode after data has been accessed with a valid Read operation. This
reduces the I DD active read current from typically 5 mA to typically 3 μA. The Auto Low Power mode
reduces the typical I DD active read current to the range of 2 mA/MHz of Read cycle time. The device
exits the Auto Low Power mode with any address transition or control signal transition used to initiate
another Read cycle, with no access time penalty. Note that the device does not enter Auto-Low Power
mode after power-up with CE# held steadily low, until the first address transition or CE# is driven high.
Read
The Read operation of the SST39VF801C/802C and SST39LF801C/802C is controlled by CE# and OE#,
both have to be low for the system to obtain data from the outputs. CE# is used for device selection.
When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output con-
trol and is used to gate data from the output pins. The data bus is in high impedance state when either
CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 6).
Word-Program Operation
The SST39VF801C/802C and SST39LF801C/802C are programmed on a word-by-word basis. Before
programming, the sector where the word exists must be fully erased. The Program operation is accom-
plished in three steps. The first step is the three-byte load sequence for Software Data Protection. The
second step is to load word address and word data. During the Word-Program operation, the
addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is
latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs
first. The Program operation, once initiated, will be completed within 10 μs. See Figures 7 and 8 for
WE# and CE# controlled Program operation timing diagrams and Figure 22 for flowcharts. During the
Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program
operation, the host is free to perform additional tasks. Any commands issued during the internal Pro-
gram operation are ignored. During the command sequence, WP# should be statically held high or low.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or
block-by-block) basis. The SST39VF801C/802C and SST39LF801C/802C offer both Sector-Erase and
Block-Erase mode.
The sector architecture is based on a uniform sector size of 2 KWord. The Block-Erase mode is based
on non-uniform block sizes—fifteen 32 KWord, one 16 KWord, two 4 KWord, and one 8 KWord blocks.
See Figure 2 for top and bottom boot device block addresses. The Sector-Erase operation is initiated
by executing a six-byte command sequence with Sector-Erase command (50H) and sector address
(SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command
sequence with Block-Erase command (30H) and block address (BA) in the last bus cycle. The sector
or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or
50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the
?2011 Silicon Storage Technology, Inc.
7
DS25041A
05/11
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相关代理商/技术参数 |
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| SST39VF801C-70-4I-B3KE | 功能描述:闪存 2.7 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF801C-70-4I-B3KE-T | 功能描述:闪存 2.7 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF801C-70-4I-EKE | 功能描述:闪存 2.7 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF801C-70-4I-EKE-T | 功能描述:闪存 2.7 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39VF801C-70-4I-MAQE | 功能描述:闪存 2.7 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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