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参数资料
| 型号： | SST39WF800B-70-4I-MAQE |
| 厂商： | Microchip Technology |
| 文件页数： | 15/33页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 8MBIT 70NS 48WFBGA |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 740 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 8M（512K x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-WFBGA |
| 供应商设备封装： | 48-WFBGA（6x4） |
| 包装： | 托盘 |
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8 Mbit (x16) Multi-Purpose Flash
A Microchip Technology Company
SST39WF800B
Data Sheet
DC Characteristics
Table 11: DC Operating Characteristics, V DD = 1.65-1.95V 1
Limits
Symbol Parameter
Power Supply Current
I DD
Min
Max
Units Test Conditions
Address input=V ILT /V IHT, at f=5 MHz, V DD =V DD Max
Read
Program and Erase
15
20
mA
mA
CE#=V IL , OE#=WE#=V IH , all I/Os open
CE#=WE#=V IL , OE#=V IH
I SB
Standby V DD
Current 2
40
μA
CE#=V DD , V DD =V DD Max
I LI
I LO
V IL
V IH
V OL
V OH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
0.8V DD
V DD -0.1
1
1
0.2V DD
0.1
μA
μA
V
V
V
V IN =GND to V DD , V DD =V DD Max
V OUT =GND to V DD , V DD =V DD Max
V DD =V DD Min
V DD =V DD Max
I OL =100 μA, V DD =V DD Min
I OH =-100 μA, V DD =V DD Min
T11.0 25031
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V DD = 1.8V. Not 100% tested.
2. 40 μA is the maximum I SB for all SST39WF800B commercial grade devices. 40 μA is the maximum I SB for all
39WF800A industrial grade devices. For all SST39WF800B commercial and industrial devices, I SB typical is under 5
μA.
Table 12: Capacitance (T A = 25°C, f=1 MHz, other pins open)
Parameter
Description
Test Condition
Maximum
C I/O
1
I/O Pin Capacitance
V I/O = 0V
12 pF
C IN1
Input Capacitance
V IN = 0V
6 pF
T12.0 25031
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
N END
T DR1
I LTH1
1,2
Endurance
Data Retention
Latch Up
10,000
100
100 + I DD
Cycles
Years
mA
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T13.0 25031
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N END endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
?2011 Silicon Storage Technology, Inc.
15
DS25031A
08/11
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