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| 型号： | SST49LF016C-33-4C-EIE |
| 厂商： | Microchip Technology |
| 文件页数： | 13/43页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER LPC 16MBIT 40TSOP |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 120 |
| 系列： | SST49 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 33MHz |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 40-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 40-TSOP |
| 包装： | 托盘 |
| 产品目录页面： | 1453 (CN2011-ZH PDF) |
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16 Mbit LPC Serial Flash
A Microchip Technology Company
SST49LF016C
Data Sheet
Firmware Memory Write Cycle
Table 5: Firmware Memory Write Cycle
Field
Clock
Cycle
Field
Name
Contents
LAD[3:0] 1
LAD[3:0]
Direction Comments
1
START
1110
IN
LFRAME# must be active (low) for the part to respond. Only the
last start field (before LFRAME# transitions high) will be recog-
nized. The START field contents (1110b) indicate a Firmware
Memory Write cycle.
2
IDSEL
0000 to
IN
Indicates which SST49LF016C device should respond. If the
1111
IDSEL (ID select) field matches the value of ID[3:0], then that par-
ticular device will respond to the whole bus cycle.
3-9
MADDR
YYYY
IN
These seven clock cycles make up the 28-bit memory address.
YYYY is one nibble of the entire address. Addresses are trans-
ferred most-significant nibble first.
10
MSIZE
KKKK
IN
The MSIZE field indicates how many bytes will be transferred
during multi-byte operations.
Device supports 1, 2, and 4 Bytes write with MSIZE = 0, 1, or 2,
and KKKK=0000b, 0001b, or 0010b.
11-A
DATA
ZZZZ
IN
A=(10+2 n+1 ); n = MSIZE
Least significant nibble entered first.
(A+1)
TAR0
1111
IN then
In this clock cycle, the master has driven the bus to all ‘1’s and
Float
then floats the bus prior to the next clock cycle. This is the first part
of the bus “turnaround cycle.” A=(10+2 n+1 ); n = MSIZE
(A+2)
TAR1
1111
Float
The SST49LF016C takes control of the bus during this cycle.
(float)
then OUT A=(10+2 n+1 ); n = MSIZE
(A+3)
RSYNC
0000
OUT
During this clock cycle, the SST49LF016C generates a “ready
sync” (RSYNC) and outputs the values 0000, indicating that it has
received data or a flash command. A=(10+2 n+1 ); n = MSIZE
(A+4)
TAR0
1111
OUT then
In this clock cycle, the SST49LF016C drives the bus to all ‘1’s and
Float
then floats the bus prior to the next clock cycle. This is the first part
of the bus “turnaround cycle”. A=(10+2 n+1 ); n = MSIZE
(A+5)
TAR1
1111
(float)
Float
then IN
The host resumes control of the bus during this cycle.
A=(10+2 n+1 ); n = MSIZE
T5.0 25029
1. Field contents are valid on the rising edge of the present clock cycle.
LCLK
LFRAME#
Start
IDSEL
MADDR
MSIZE
DATA
TAR0
TAR1
RSYNC
LAD[3:0]
1110b 0000b A[27:24] A[23:20] A[19:16] A[15:12] A[11:8]
A[7:4]
A[3:0]
KKKKb
D 0 [3:0]
D 0 [7:4]
Dn[3:0] Dn[7:4]
1111b
Tri-State 0000b
TAR
1237 F04.0
Figure 7: Firmware Memory Write Cycle Waveform
?2011 Silicon Storage Technology, Inc.
13
DS25029A
06/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST49LF016C-33-4C-EIE-T | 功能描述:闪存 3.0 to 3.6V 16Mbit LPC Firmware 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-NHE | 功能描述:闪存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-NHE-T | 功能描述:闪存 3.0 to 3.6V 16Mbit LPC Firmware 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-WHE | 功能描述:闪存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-WHE_ | 制造商:Microchip Technology Inc 功能描述: |
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