参数资料
型号: SSTUB32S868DHLFT
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/20页
文件大小: 0K
描述: IC REGIST BUFF 25BIT DDR2 176BGA
产品变化通告: Product Discontinuation 09/Dec/2011
标准包装: 1,000
逻辑类型: DDR2 的寄存缓冲器
电源电压: 1.7 V ~ 1.9 V
位数: 25
安装类型: 表面贴装
封装/外壳: 176-TFBGA
供应商设备封装: 176-CABGA(6x15)
包装: 带卷 (TR)
17
ICSSSTUB32S868D
Advance Information
08/14/06
Notes: 1. CL incluces probe and jig capacitance.
2. IDD tested with clock and data inputs held at VDD or GND, and Io = 0mA.
3. All input pulses are supplied by generators having the following chareacteristics: PRR
≤10 MHz,
Zo=50
, input slew rate = 1 V/ns ±20% (unless otherwise specified).
4. The outputs are measured one at a time with one transition per measurement.
5. VREF = VDD/2
6. VIH = VREF + 250 mV (ac voltage levels) for differential inputs. VIH = VDD for LVCMOS input.
7. VIL = VREF - 250 mV (ac voltage levels) for differential inputs. VIL = GND for LVCMOS input.
8. VID = 600 mV
9. tPLH and tPHL are the same as tPDM.
Figure 6 — Parameter M easurement I nfor mation (VDD = 1.8 V ± 0.1 V)
RL = 1000
CL = 30 pF
(see Note 1)
LOAD CIRCUIT
tw
VICR
Inpu t
VIH
VIL
VOLTAGE WAVEFORMS – PULSE DURATION
VREF
Inpu t
tsu
th
VID
VICR
VOLTAGE WAVEFORMS – SETUP AND HOLD TIMES
VICR
VID
VICR
Output
VOL
VOH
VTT
tPHL
tPLH
VOLTAGE WAVEFORMS – PROPAGATION DELAY TIMES
tRPHL
VOL
VOH
VIL
VIH
Output
VOLTAGE WAVEFORMS – PROPAGATION DELAY TIMES
VDD/2
VTT
tact
tinact
LVCMOS
Input
RST#
VOLTAGE AND CURRENT WAVEFORMS
IDD
(see
Note 2)
90%
10%
INPUTS ACTIVE AND INACTIVE TIMES
0 V
VDD
Test Point
VDD/2
VCMOS
Inp ut
RST#
TL=350ps, 50
DUT
CK#
Out
TL=50
CK Inputs
VID
CK#
CK
CK#
CK
RL = 100
CK
Test Point
RL = 1000
VDD
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