参数资料
型号: SSTV16859EC,518
厂商: NXP SEMICONDUCTORS
元件分类: 锁存器
英文描述: SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA96
封装: 13.50 X 5.50 MM, 1.05 MM HEIGHT, PLASTIC, SOT-536-1, LFBGA-96
文件页数: 7/14页
文件大小: 118K
代理商: SSTV16859EC,518
Philips Semiconductors
Product data
SSTV16859
2.5 V 13-bit to 26-bit SSTL_2
registered buffer for stacked DDR DIMM
2
2002 Feb 19
853–2233 27756
FEATURES
Stub-series terminated logic for 2.5 V V
DD (SSTL_2)
Optimized for stacked DDR (Double Data Rate) SDRAM
applications
Supports SSTL_2 signal inputs as per JESD 8–9
Flow-through architecture optimizes PCB layout
ESD classification testing is done to JEDEC Standard JESD22.
Protection exceeds 2000 V to HBM per method A114.
Latch-up testing is done to JEDEC Standard JESD78, which
exceeds 100 mA.
Supports efficient low power standby operation
Full DDR 200/266 solution for stacked DIMMs at 2.5 V when used
with PCKV857
See SSTV16857 for JEDEC compliant register support in
unstacked DIMM applications
See SSTV16856 for driver/buffer version with mode select.
DESCRIPTION
The SSTV16859 is a 13-bit to 26-bit SSTL_2 registered driver with
differential clock inputs, designed to operate between 2.3 V and
2.7 V. All inputs are compatible with the JEDEC standard for
SSTL_2 with VREF normally at 0.5*VDD, except the LVCMOS reset
(RESET) input. All outputs are SSTL_2, Class II compatible which
can be used for standard stub-series applications or capacitive
loads. Master reset (RESET) asynchronously resets all registers to
zero.
The SSTV16859 is intended to be incorporated into standard DIMM
(Dual In-Line Memory Module) designs defined by JEDEC, such as
DDR (Double Data Rate) SDRAM and SDRAM II Memory Modules.
Different from traditional SDRAM, DDR SDRAM transfers data on
both clock edges (rising and falling), thus doubling the peak bus
bandwidth. A DDR DRAM rated at 133 MHz will have a burst rate of
266 MHz.
The device data inputs consist of different receivers. One differential
input is tied to the input pin while the other is tied to a reference
input pad, which is shared by all inputs.
The clock input is fully differential (CK and CK) to be compatible with
DRAM devices that are installed on the DIMM. Data are registered
at the crossing of CK going high, and CK going low. However, since
the control inputs to the SDRAM change at only half the data rate,
the device must only change state on the positive transition of the
CK signal. In order to be able to provide defined outputs from the
device even before a stable clock has been supplied, the device has
an asynchronous input pin (RESET), which when held to the LOW
state, resets all registers and all outputs to the LOW state.
The device supports low-power standby operation. When RESET is
low, the differential input receivers are disabled, and undriven
(floating) data, clock, and reference voltage (VREF) inputs are
allowed. In addition, when RESET is low, all registers are reset, and
all outputs are forced low. The LVCMOS RESET input must always
be held at a valid logic high or low level.
To ensure defined outputs from the register before a stable clock
has been supplied, RESET must be held in the low state during
power-up.
In the DDR DIMM application, RESET is specified to be completely
asynchronous with respect to CK and CK. Therefore, no timing
relationship can be guaranteed between the two. When entering
RESET, the register will be cleared and the outputs will be driven
low. As long as the data inputs are low, and the clock is stable
during the time from the low-to-high transition of RESET until the
input receivers are fully enabled, the outputs will remain low.
Available in 64-pin plastic thin shrink small outline package.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25°C; tr = tf v2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
Propagation delay; CLK to Qn
CL = 30 pF; VDD = 2.5 V
2.4
ns
CI
Input capacitance
VCC = 2.5 V
2.7
pF
NOTE:
1. CPD is used to determine the dynamic power dissipation (PD in W) PD = CPD × VCC2 × fi + Σ (CL × VCC2 × fo) where:
fi = input frequency in MHz; CL = output load capacity in pF; fo = output frequency in MHz; VCC = supply voltage in V;
Σ (CL × VCC2 × fo) = sum of the outputs.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDER CODE
DWG NUMBER
64-Pin Plastic TSSOP
0 to +70
°C
SSTV16859DGG
SOT646AA1
96-Ball Plastic LFBGA
0 to +70
°C
SSTV16859EC
SOT536-1
56-Terminal Plastic HVQFN
0 to +70
°C
SSTV16859BS
SOT684-1
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相关代理商/技术参数
参数描述
SSTV16859EC-S 功能描述:寄存器 2.5V 13BT-26B SSTL2 REG BUFFER RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube
SSTV16859EC-T 功能描述:寄存器 2.5V 13BT-26B SSTL2 REG BUFFER RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube
SSTV16859G 功能描述:寄存器 13-Bit Register DO SSTL-2 Comp RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube
SSTV16859GX 功能描述:寄存器 13-Bit Register DO SSTL-2 Comp RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube
SSTV16859MTD 功能描述:寄存器 13-Bit Register DO SSTL-2 Comp RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube